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We present a theoretical model for calculating the band structures of strained quantum-well wurtzite semiconductors. The theory is based on the Hamiltonian for wurtzite semiconductors and includes the strain effects on the shifts of the band edges. We show new results that include the matrix elements of the Hamiltonian using the finite-difference method for the calculations of the valence electronic band structures of GaN/Al x Ga 1−x N quantum-well wurtzite semiconductors based on the effective-mass theory.

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