<i>Physics of Optoelectronic Devices</i>

Chuang, Shun Lien; Peyghambarian, N.; Koch, S. W.

doi:10.1063/1.2807693

Cited by 765 publications

(889 citation statements)

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“…In order to estimate how much material gain was achieved from nanoresonators under electrical injection, we fit EL spectra using well-known equations 48 for material gain g and spontaneous emission r sp , as shown inequations (1-4). Supplementary Table 1 defines the variables in the equations.…”

Section: Methodsmentioning

confidence: 99%

Nanophotonic integrated circuits from nanoresonators grown on silicon

Chen

et al. 2014

Nat Commun

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Harnessing light with photonic circuits promises to catalyse powerful new technologies much like electronic circuits have in the past. Analogous to Moore's law, complexity and functionality of photonic integrated circuits depend on device size and performance scale. Semiconductor nanostructures offer an attractive approach to miniaturize photonics. However, shrinking photonics has come at great cost to performance, and assembling such devices into functional photonic circuits has remained an unfulfilled feat. Here we demonstrate an on-chip optical link constructed from InGaAs nanoresonators grown directly on a silicon substrate. Using nanoresonators, we show a complete toolkit of circuit elements including light emitters, photodetectors and a photovoltaic power supply. Devices operate with gigahertz bandwidths while consuming subpicojoule energy per bit, vastly eclipsing performance of prior nanostructure-based optoelectronics. Additionally, electrically driven stimulated emission from an as-grown nanostructure is presented for the first time. These results reveal a roadmap towards future ultradense nanophotonic integrated circuits.

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Section: Methodsmentioning

confidence: 99%

Nanophotonic integrated circuits from nanoresonators grown on silicon

Chen

et al. 2014

Nat Commun

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“…Particularly for direct electrical modulation, which will be important for communication applications, factors like non-linear gain compression restrict the modulation bandwidth before the  p limit is reached 23 . Small laser cavities have also been shown to significantly modify the rate of spontaneous emission 17,19,20 which can enhance the modulation bandwidth, particularly if the cavity is used as a light emitting diode rather than a laser [23][24][25][26] . In optical signal processing applications however, optical modulation bandwidth could approach the photon lifetime limit 27 .…”

Section: Limits On Laser Sizementioning

confidence: 99%

Advances in small lasers

2014

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In recent years there have been significant advances in the size and characteristics of small lasers, i.e. lasers with dimensions or modes sizes close to or smaller than the wavelength of emitted light. This work has primarily been led by innovative use of new materials and cavity designs. This article reviews some of the latest developments, particularly in metallic and plasmonic lasers, improvements in small dielectric lasers, and the emerging area of small bio-compatible/bioderived lasers. We examine the different approaches employed in small lasers to reduce size and how they lead to significant differences , particularly between metal and dielectric cavity lasers. We present potential applications for the various forms of small lasers and indicate where further developments are required.

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“…In applications where a constant output power is required, strong damping of the relaxation oscillations is therefore favorable. The relaxation-oscillation frequency is important for modulation applications, as a modulation of the laser with a frequency near ω RO can resonantly excite relaxation oscillations and lead to unwanted nonuniform laser responses [CHU95], as will be discussed in Sec. 3.4.…”

Section: Laser Dynamics -Relaxation Oscillationsmentioning

confidence: 99%

Nonlinear and Nonequilibrium Dynamics of Quantum-Dot Optoelectronic Devices

Lingnau

2015

Springer Theses

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In this thesis the dynamics and performance of optoelectronic devices based on semiconductor quantum-dots are investigated.In the first part, the dynamics of quantum-dot lasers under external perturbations is discussed. Using a microscopically based balance equation model that incorporates detailed charge-carrier scattering dynamics and the possibility to describe nonequilibrium between intra-band electronic states, the relaxation oscillations of the quantum-dot laser are investigated. Three qualitatively different dynamic regimes are identified in dependence of the scattering rates -the "constantreservoir" regime for slow scattering, the "overdamped" regime, and the "synchronized" regime for high scattering -characterized by a varying degree of nonequilibrium between the quantum-dot and reservoir states.Important differences to conventional lasers are found in the modulation response and the dynamics in optical injection and feedback setups. Common theoretical models and approaches used to describe these applications are shown to yield inaccurate predictions, especially in the "constant-reservoir" and "overdamped" dynamic regimes. An important consequence is that the amplitude-phase coupling in quantum-dot lasers, commonly described by the α-factor, differs from conventional descriptions due to the desynchronization of gain and refractive index. While the α-factor describes bifurcations of fixed points accurately, it fails in describing dynamic solutions and overestimates the extent of complex dynamics. The observed low sensitivity to optical perturbations in quantum-dot lasers can therefore be attributed partly to the charge-carrier nonequilibrium. Three quantum-dot laser models on different levels of sophistication are presented that can accurately describe the quantum-dot nonequilibrium dynamics.In the second part of the thesis, the performance of quantum-dot semiconductor optical amplifiers is investigated, and two types of applications unique to quantum-dots as active medium are discussed. The ground and excited states of the quantum-dots allow an ultra-broad-band amplification of optical data streams. Amplified signals on the ground-state frequencies are shown to generally exhibit higher quality than on the excited state, due to a lower sensitivity of the groundstate to carrier-density variations. Nevertheless the quantum-dot amplifier is found to allow effective amplification on both frequency ranges. Furthermore, a parameter range is identified that allows for a simultaneous amplification of data signals on the ground and excited state in a counter-propagating setup.The long microscopically polarization dephasing times in quantum-dots are found to enable quantum-coherent interactions on a macroscopic scale at room-temperature. By comparison with experiments, the occurrence of Rabi-oscillations by amplification of ultra-short pulses is demonstrated. Quantum-dot based devices could therefore be used for future applications based on quantum-coherent effects.

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Physics of Optoelectronic Devices

Cited by 765 publications

References 0 publications

Nanophotonic integrated circuits from nanoresonators grown on silicon

Nanophotonic integrated circuits from nanoresonators grown on silicon

Advances in small lasers

Nonlinear and Nonequilibrium Dynamics of Quantum-Dot Optoelectronic Devices

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