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Highlights SIMS analysis confirmed the doping of Er into the In2O3 TF  I-V loop analysis gives reduced current memory window for In2O3:Er TF based device  High ideality factor was determined at low temperature and explained  Defect related photoconductivity was confirmed from low temperature measurement  10 K temporal response of the Au/In2O3:Er/Si confirmed removal of oxygen defects

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Sterile inflammation (SI) is an essential process in response to snakebite and injury. The venom induced pathophysiological response to sterile inflammation results into many harmful and deleterious effects that ultimately leads to death. The available treatment for snakebite is antiserum which does not provide enough protection against venom-induced pathophysiological changes like haemorrhage, necrosis, nephrotoxicity and often develop hypersensitive reactions. In order to overcome these hindrances, scientists around the globe are searching for an alternative therapy to provide better treatment to the snake envenomation patients. In the present study TiO 2 (Titanium dioxide)-NPs (Nanoparticles) has been assessed for antisnake venom activity and its potential to be used as an antidote. In this study, the synthesis of TiO 2 -NPs arrays has been demonstrated on p-type Silicon Si < 100 > substrate (∼30 ohm-cm) and the surface topography has been detected by Field-emission scanning electron microscopy (FESEM). The TiO 2 -NPs successfully neutralized the Daboia russelii venom (DRV) and Naja kaouthia venom (NKV)-induced lethal activity. Viper venom induced haemorrhagic, coagulant and anticoagulant activities were effectively neutralized both in in-vitro and in vivo studies. The cobra and viper venoms-induced sterile inflammatory molecules (IL-6, HMGB1, HSP70, HSP90, S100B and vWF) were effectively neutralised by the TiO 2 -NPs in experimental animals.

This paper estimates the robustness of non-volatile device (NVM) Gadolinium (Gd) doped Hafnium oxide (HfO 2 ) nanoparticles (NPs) based memristor which was constructed using as-formed and annealed nanoparticles in 600 • C and 800 • C temperature, based on their performance in various basic image processing applications (i.e. edge detection filter and noise-canceling filter). A catalytic free glancing angle deposition technique (GLAD) is employed to grow Gd doped HfO 2 nanoparticles (NPs) of 8 nm range on the thin film of Silicon oxide SiOx in 30 nm dimension. Annealing process is performed on Gd-doped HfO 2 NPs and and the changes were demonstrated in its surface morphology. The elemental composition of the device was analyzed by Energy Dispersive X-ray (EDX). Photoluminescence (PL) analysis revealed that the topography and electrical characteristics of Gd-doped HfO 2 alter swiftly after annealing process. A leakage current, interface state density (Dit) factor emphasizes that the device annealed at 600 • C portrayed significant improvement in the non-volatile characteristics in comparison with other devices. Additionally, the endurance of the device annealed at 600 • C was seen to possess more than decades of memory potential. The C-V and hysteresis curve measurement demonstrated maximal charge accumulation relative to other devices. Crossbar array is designed from both as-formed and annealed memristor devices.

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