Metal halide perovskites (MHPs) have been one of the most promising materials for the photoelectric, electro-optical, and all-optical conversion devices, thanks to their excellent energy conversion. To investigate the energy conversion induced by structural symmetry, herein, the carrier dynamics and dielectric properties in MHPs are surveyed and reviewed as the microscopic and macroscopic bridge, respectively. The intrinsic correlations between the structural symmetry broken, carrier dynamics, and energy conversion performance are systematically analyzed by considering the energy band structures and dielectric constants. The internal energy conversion mechanisms are elucidated to pave the way for the perovskite advanced applications.
Effects of Pb 5 Ge 3 O 11 (PGO) sintering additive on the sintering temperature (Ts) and the pyroelectric properties of 1×1mm 2 Lead-zirconate-titanate (PZT) thick films on Pt/Ti/SiO 2 /Si substrate were studied. The pattern of PGO-added PZT thick films were directly formed by electrophoresis deposition (EPD). The PGO percentage and Ts were optimized at the range of from 0wt% to 9wt% and 700°C to 900°C, respectively. The 800°C-sintered PZT films with 3wt% PGO exhibited room-temperature pyroelectric coefficient (Pc) of 1.73×10-8 C/cm 2 K, permittivity of 330 and dielectric loss of 1.5%, figure of merit for detectivity (FD) of 1.7×10-5 Pa-0.5 , respectively. These results demonstrate that the patterned PGO-added PZT thick films show potential applications in Si MEMS infrared detectors.
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