Enhancement of Pyroelectric PZT Thick Film Sintered at Low Temperature on Pt-Si Substrate by Adding Pb₅Ge₃O₁₁

Abstract

Effects of Pb 5 Ge 3 O 11 (PGO) sintering additive on the sintering temperature (Ts) and the pyroelectric properties of 1×1mm 2 Lead-zirconate-titanate (PZT) thick films on Pt/Ti/SiO 2 /Si substrate were studied. The pattern of PGO-added PZT thick films were directly formed by electrophoresis deposition (EPD). The PGO percentage and Ts were optimized at the range of from 0wt% to 9wt% and 700°C to 900°C, respectively. The 800°C-sintered PZT films with 3wt% PGO exhibited room-temperature pyroelectric coefficient (Pc) of 1.73×10-8 C/cm 2 K, permittivity of 330 and dielectric loss of 1.5%, figure of merit for detectivity (FD) of 1.7×10-5 Pa-0.5 , respectively. These results demonstrate that the patterned PGO-added PZT thick films show potential applications in Si MEMS infrared detectors.