Doping has been demonstrated to be an effective method to improve the properties of two-dimensional materials. In this work, the mechanical, electrical properties, and carrier mobility of substitutionally doped phosphorene...

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The authors simulated the damage caused by proton irradiation to the device and analyzed the effect of proton irradiation on two-dimensional electron mobility taking various scattering mechanisms into account. Proton-irradiation simulation of the AlGaN/AlN/GaN HEMT device was carried out to obtain the irradiation simulation results by using SRIM software. Then, considering various scattering mechanisms, the authors established a model to simulate two-dimensional electron mobility under different proton energy and irradiation doses at low temperature. The theoretical data show that proton irradiation significantly decreased the mobility of a two-dimensional electron in a GaN-based HEMT at low temperature.

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