Positive exchange bias has been observed in the Ni81Fe19/Ir20Mn80 bilayer system via soft-x-ray resonant magnetic scattering. After field cooling of the system through the blocking temperature of the antiferromagnet, an initial conventional negative exchange bias is removed after training, i.e., successive magnetization reversals, resulting in a positive exchange bias for a temperature range down to 30 K below the blocking temperature (450 K). This new manifestation of magnetic training is discussed in terms of metastable magnetic disorder at the magnetically frustrated interface during magnetization reversal.

We report the observation of a Skyrmion lattice in the chiral multiferroic insulator Cu2OSeO3 using Cu L3-edge resonant soft x-ray diffraction. We observe the unexpected existence of two distinct Skyrmion sublattices that arise from inequivalent Cu sites with chemically identical coordination numbers but different magnetically active orbitals. The Skyrmion sublattices are rotated with respect to each other, implying a long wavelength modulation of the lattice. The modulation vector is controlled with an applied magnetic field, associating this moirélike phase with a continuous phase transition. Our findings will open up a new class of science involving manipulation of quantum topological states.

We show that properly engineered amorphous Fe-Gd alloy thin films with perpendicular magnetic anisotropy (PMA) exhibit bound pairs of like-polarity, opposite helicity skyrmions at room temperature. Magnetic mirror symmetry planes present in the stripe phase, instead of chiral exchange, determine the internal skyrmion structure and the net achirality of the skyrmion phase. Our study shows that stripe domain engineering in amorphous alloy thin films may enable the creation of skyrmion phases with technologically desirable properties.

We describe a novel experimental facility at the BESSY II synchrotron, aiming at probing element-specific magnetic properties at the nm-length scale. It consists of a novel photoemission electron microscope with photoelectron spin analysis combined with a microfocus beamline and full X-ray polarization control. The facility is capable of magnetic imaging in applied fields allowing the observation of magnetic switching phenomena on a 30-nm-length scale.

SrMnSb 2 is suggested to be a magnetic topological semimetal. It contains square, 2D Sb planes with non-symmorphic crystal symmetries that could protect band crossings, offering the possibility of a quasi-2D, robust Dirac semi-metal in the form of a stable, bulk (3D) crystal. Here, we report a combined and comprehensive experimental and theoretical investigation of the electronic structure of SrMnSb 2 , including the first ARPES data on this compound. SrMnSb 2 possesses a small Fermi surface originating from highly 2D, sharp and linearly dispersing bands (the 'Y-states') around the (0,π/a)-point in kspace. The ARPES Fermi surface agrees perfectly with that from bulk-sensitive Shubnikov de Haas data from the same crystals, proving the Y-states to be responsible for electrical conductivity in SrMnSb 2 . DFT and tight binding (TB) methods are used to model the electronic states, and both show good agreement with the ARPES data. Despite the great promise of the latter, both theory approaches show the Y-states to be gapped above E F , suggesting trivial topology. Subsequent analysis within both theory approaches shows the Berry phase to be zero, indicating the non-topological character of the transport in SrMnSb 2 , a conclusion backed up by the analysis of the quantum oscillation data from our crystals.

We have employed soft and hard x-ray resonant magnetic scattering and polarized neutron diffraction to study the magnetic interface and the bulk antiferromagnetic domain state of the archetypal epitaxial Ni 81 Fe 19 ͑111͒ / CoO͑111͒ exchange biased bilayer. The combination of these scattering methods provides unprecedented detailed insights into the still incomplete understanding of some key manifestations of the exchange bias effect. We show that the several orders of magnitude difference between the expected and measured value of exchange bias field is caused by an anisotropic in-plane orientation of antiferromagnetic domains. Irreversible changes in their configuration lead to a training effect. This is directly seen as a change in the magnetic half-order Bragg peaks after magnetization reversal. The antiferromagnetic domain size is extracted from the width of the ͑ 1 2 1 2 1 2 ͒ antiferromagnetic peak by both neutron and x-ray scattering and is determined to be 30 nm in size. A reduced blocking temperature as compared to the measured antiferromagnetic ordering temperature clearly corresponds to the blocking of antiferromagnetic domains. Moreover, an excellent correlation between the size of the antiferromagnetic domains, exchange bias field, and frozen-in spin ratio is found, providing a comprehensive understanding of the origin of exchange bias in epitaxial systems.

We present a comprehensive study of the exchange bias effect in a model system. Through numerical analysis of the exchange bias and coercive fields as a function of the antiferromagnetic layer thickness we deduce the absolute value of the averaged anisotropy constant of the antiferromagnet. We show that the anisotropy of IrMn exhibits a finite size effect as a function of thickness. The interfacial spin disorder involved in the data analysis is further supported by the observation of the dual behavior of the interfacial uncompensated spins. Utilizing soft x-ray resonant magnetic reflectometry we have observed that the antiferromagnetic uncompensated spins are dominantly frozen with nearly no rotating spins due to the chemical intermixing, which correlates to the inferred mechanism for the exchange bias.

Vanadium dioxide (VO 2 ) is a much-discussed material for oxide electronics and neuromorphic computing applications. Here, heteroepitaxy of VO 2 is realized on top of oxide nanosheets that cover either the amorphous silicon dioxide surfaces of Si substrates or X-ray transparent silicon nitride membranes. The out-of-plane orientation of the VO 2 thin films is controlled at will between (011) M1 /(110) R and (−402) M1 /(002) R by coating the bulk substrates with Ti 0.87 O 2 and NbWO 6 nanosheets, respectively, prior to VO 2 growth. Temperature-dependent X-ray diffraction and automated crystal orientation mapping in microprobe transmission electron microscope mode (ACOM-TEM) characterize the high phase purity, the crystallographic and orientational properties of the VO 2 films. Transport measurements and soft X-ray absorption in transmission are used to probe the VO 2 metal-insulator transition, showing results of a quality equal to those from epitaxial films on bulk single-crystal substrates. Successful local manipulation of two different VO 2 orientations on a single substrate is demonstrated using VO 2 grown on lithographically patterned lines of Ti 0.87 O 2 and NbWO 6 nanosheets investigated by electron backscatter diffraction. Finally, the excellent suitability of these nanosheet-templated VO 2 films for advanced lensless imaging of the metalinsulator transition using coherent soft X-rays is discussed.