We have developed a new evaluation method for electrical properties of Cu(In,Ga)Se 2 (CIGS) grown on a Mo-coated soda-lime glass (SLG). The method consists of the peel-off process and the AC Hall measurement, which enables us to evaluate CIGS films grown on the Mo electrode. It was found, from the measurement, that the hole concentration of CIGS grown on a Mo-coated SLG was approximately two orders of magnitude higher than that on a SLG, suggesting the Na-doping effect. Furthermore, the hole mobility of 0.47 cm 2 /(V&s) was simultaneously measured, even though the film was deposited on the Mo electrode.
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