Investigation of the effects of rear surface recombination on the Cu(In,Ga)Se2 solar cell performances

Passivation of Deep-Level Defects by Cesium Fluoride Post-Deposition Treatment for Improved Device Performance of Cu(In,Ga)Se2 Solar Cells

“…CIGS absorber layers were deposited onto Mo-coated soda-lime glass (SLG) by a three-stage coevaporation method. Details of the deposition procedure of the CIGS have been previously described. , The target CIGS thickness was in the range of 1.5–2 μm, and the atomic compositions of Cu/(In + Ga) and Ga/(In + Ga) were maintained at 0.90 and 0.35, respectively, which are the ratios yielding the best device in our process. In situ Cs-PDT was performed by evaporating CsF under a Se atmosphere at a substrate temperature of 400 °C after the three-stage CIGS deposition.…”

Passivation of Interfaces in Thin Film Solar Cells: Understanding the Effects of a Nanostructured Rear Point Contact Layer

“…Simply, the chemical passivation allows for the decrease of the total number of electrically active defects. [38][39][40][41] Ultrathin devices have recently been studied in detail by numerous groups [42][43][44][45][46][47] as they have the potential to reduce the material costs and manufacturing times. Such field is beneficial for the electrical performance of the solar cell, since it drives minority carriers away from the highly recombinative rear contact into the space charge region.…”

“…[36,37] These findings have motivated device simulations that have predicted gains up to 3% (in absolute power conversion efficiency) in fully passivated solar cells. [38][39][40][41] Ultrathin devices have recently been studied in detail by numerous groups [42][43][44][45][46][47] as they have the potential to reduce the material costs and manufacturing times. [48] Ultrathin devices are believed to be the forward path in this CIGS technology as they enable a combination of significant advantages: (i) lower material consumption, which is of crucial industrial importance mainly due to In scarcity; (ii) increased mechanical flexibility and integration in a broad range of consumer-oriented applications (e.g., BIPV, portable electronics, wearables, internet of things, etc.…”

Efficiency boosting in Sb2(S,Se)3 solar cells enabled by tailoring bandgap gradient via a hybrid growth method

“…Bandgap engineering has proven to be a practical approach for achieving high photovoltaic performance in tunable bandgap solar cells, such as CIGS, 11–16 and Cu 2 ZnSn(S,Se) 4 17–21 solar cells. For example, high-performance CIGS solar cells often employ a double-graded bandgap profile, featuring a narrower bandgap in the middle of the absorber layer and wider bandgaps at the front and back sides.…”