Effective conversion of solar photons into electrical power through the development of smart and eco‐friendly materials is one of the most extensively researched methods for generating renewable energy. In this work, an inorganic lead‐free double perovskite Cs2SnI6 material is employed as an active layer for solar cell applications, together with GO (graphene oxide) as electron transport layer (ETL) and Cu2O as hole transport layer (HTL). In order to find the most efficient photovoltaic device, a detailed theoretical study using the SCAPS‐1D simulation program is conducted. The device performance is monitored and analyzed by considering various HTLs, doping density in active layer, light intensity, ETL thickness, operating temperature, parasitic resistances, and the role of defects on device performance. The optimized device displays a power conversion efficiency of 23.64% with excellent photovoltaic characteristics. This theoretical study reveals that Cs2SnI6 can be a promising choice for solar cell applications as a lead‐free double perovskite material.
Recently, indoor photovoltaics have gained research attention due to its potential applications in the Internet of Things (IoT) sector and most of the devices in modern technologies are controlled via...
The interfacial defects or imperfections in the multilayer perovskite solar cells (PSCs) are detrimental for efficient and stable devices. To produce highly efficient and stable PSCs, a bilayer between the interfaces of electron‐transport material/perovskite and perovskite/hole‐transport material can be useful for suppressing recombinations at these interfaces. To passivate the interfacial defects at the perovskite/SnO2 and perovskite/Spiro‐OMeTAD for three absorber materials (CsPbI3, FAPbI3, and Cs0.05(FA0.83MA0.17)0.95Pb(I0.83Br0.17)3), a thin layer of WO3 and poly‐bathocuproine interfacial layer is explored using solar cell capacitance simulation in 1D. The optimized device photovoltaic performances significantly improve using bilayers. The power conversion efficiency for the FAPbI3‐based PSCs in bilayer configuration is more than 12% as compared to pristine, whereas open‐circuit voltage is improved by over 13%. The enhancement in device performance is attributed to the reduction of interfacial defects at both the electron transport layer/perovskite and perovskite/hole transport layer interfaces. The proposed interface modification strategy provides a novel approach for fabricating efficient perovskite devices.
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