Perovskite solar cells are expected to be applied as photoreceivers for high-efficiency optical wireless power transfer for electric vehicles. The use of Aluminium gallium nitride (AlGaN) as an electron transport layer (ETL) for wide-gap perovskite solar cells is hereby proposed. The electrical properties and energy band alignment of AlGaN deposited by either hydride vapor phase epitaxy or metal-organic chemical vapor deposition are investigated in this paper. AlGaN shows a higher conduction band level than conventional ETL materials. Simulation of the performance of a perovskite solar cell with CH3NH3PbBr3 as the absorbing layer and AlGaN as the ETL was performed using a solar cell capacitance simulator. The results suggest that AlGaN increases the power conversion efficiency of the solar cell by improving the conduction band offset between the perovskite layer and the ETL.
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