AlGaN as an electron transport layer for wide-bandgap perovskite solar cells

Hombe, Atsushi; Saiki, Shinya; Mori, Toshiyuki; Saito, Yuji; Tanimoto, Tsutomu

doi:10.35848/1347-4065/acc2ca

Cited by 2 publications

(1 citation statement)

References 53 publications

(62 reference statements)

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“…Furthermore, the large difference between the electron a nities of CsPbBr 3 and ZnO might have led to an open-circuit voltage reduction 53 . To overcome this problem, it has been proposed to use AlGaN as the ETL 54 . The TPU process observed at the CsPbBr 3 /GaAs heterointerface in this work is a rst step in studying perovskite/III-V semiconductor interfaces.…”

Section: Discussionmentioning

confidence: 99%

Intraband Transitions at a CsPbBr3/GaAs Heterointerface in a Two-Step Photon Upconversion Solar Cell

Mahamu,

Asahi,

Kita

2024

Preprint

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Two-step photon upconversion solar cells (TPU-SCs) based on III–V semiconductors can achieve enhanced sub-bandgap photon absorption because of intraband transitions at the heterointerface. From a technological aspect, the question arose whether similar intraband transitions can be realized by using perovskite/III–V semiconductor heterointerfaces. In this article, we demonstrate a TPU-SC based on a CsPbBr3/GaAs heterointerface. Such a solar cell can ideally achieve an energy conversion efficiency of 48.5% under 1-sun illumination. This is 2.1% higher than the theoretical efficiency of an Al0.3Ga0.7As/GaAs-based TPU-SC. Experimental results of the CsPbBr3/GaAs-based TPU-SC show that both the short-circuit current JSC and the open-circuit voltage VOC increase with additional illumination of sub-bandgap photons. We analyze the excitation power dependence of JSC for different excitation conditions to discuss the mechanisms behind the enhancement. In addition, the observed voltage-boost clarifies that the JSC enhancement is caused by an adiabatic optical process at the CsPbBr3/GaAs heterointerface, where sub-bandgap photons efficiently pump the electrons accumulated at the heterointerface to the conduction band of CsPbBr3. Besides the exceptional optoelectronic properties of CsPbBr3 and GaAs, the availability of a CsPbBr3/GaAs heterointerface for two-step photon upconversion paves the way for the development of high-efficiency perovskite/III–V semiconductor-based single-junction solar cells.

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Section: Discussionmentioning

confidence: 99%

Intraband Transitions at a CsPbBr3/GaAs Heterointerface in a Two-Step Photon Upconversion Solar Cell

Mahamu,

Asahi,

Kita

2024

Preprint

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Preparation and Simulation of AlGaN/CdS/Si Double Heterojunction for Solar Cell Application

Salih,

Ramizy,

Afzal

2024

Preprint

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This study presents a simple pulsed laser deposition technique (PLD) for the preparation of aluminium gallium nitride (AlGaN) thin film on CdS/Si substrate for solar cell application. A CdS layer was deposited on Si using thermal evaporator system and then AlGaN was grown on CdS/Si using the PLD technique using AlN and GaN targets. The effect of varying the number of laser pulses (300 and 600) and GaN/AlN ratio on structural, optical and morphological properties of the AlGaN thin film was investigated. Structural characterizations by x-ray diffraction revealed (0002) plane of AlGaN along with the diffraction peaks of GaN and AlN. The crystallite size of the AlGaN was decreased by increasing the GaN/AlN ratio. Photoluminescence (PL) spectra revealed that the energy band gap of AlGaN was slightly varied between 3.6 eV and 3.7 eV due to change of the GaN/AlN ratio. Surface roughness of the AlGaN was increased on increasing then laser pulses from 300 to 600 at lower GaN/AlN ratio, while it showed opposite trend in the case in which relatively higher ratio was used. Field-emission scanning electron microscopy showed semi-spherical grains of the films whose size was changed by changing the number of laser pulses and also the GaN/AlN ratio. The results of solar cell efficiency indicated a low efficiency (0.27%) of CdS/Si based solar cell which was significantly improved due to the growth of AlGaN on CdS/Si. solar cells based on AlGaN/CdS/Si prepared under various were found to be 2.50%, 2.83%, 2.23% and 2.81%. The solar cell efficiency obtained from the simulation study (2.68%, 2.50%, 3.29% and 3.25%) was in good agreement with the experimental results.

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AlGaN as an electron transport layer for wide-bandgap perovskite solar cells

Cited by 2 publications

References 53 publications

Intraband Transitions at a CsPbBr3/GaAs Heterointerface in a Two-Step Photon Upconversion Solar Cell

Intraband Transitions at a CsPbBr3/GaAs Heterointerface in a Two-Step Photon Upconversion Solar Cell

Preparation and Simulation of AlGaN/CdS/Si Double Heterojunction for Solar Cell Application

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