Articles you may be interested inMetal-ferroelectric ( BiFeO 3 ) -insulator ( Y 2 O 3 ) -semiconductor capacitors and field effect transistors for nonvolatile memory applications Evaluation of capacitance-voltage characteristic and memory window of metal-ferroelectric-insulator-silicon capacitors Appl. Phys. Lett. 93, 213501 (2008); 10.1063/1.3021015 Characterization of metal-ferroelectric ( Bi Fe O 3 ) -insulator ( Zr O 2 ) -silicon capacitors for nonvolatile memory applications Appl.
Resistance random access memory (RRAM) is attractive as a next-generation form of nonvolatile memory. We investigated an electric field-induced resistance change of SrFeO2+x film as a candidate for RRAM material. SrFeO2.5-x film prepared at 300 oC showed hysteresis in its current-voltage curve and distinct pulse-switching properties. On the other hand, the sample prepared below 280 oC showed hysteresis in its current-voltage curve but didn’t show pulse-switching properties. The amount of oxygen in the sample and easiness of oxygen migration play important roles in the resistance-switching properties.
Resistance random access memory (ReRAM) is attractive as a next generation nonvolatile memory. We investigated an electric field induced resistance change of SrFeO3−x (SFO) film as a candidate of RRAM material. As-deposited SFO film with high oxygen deficiency, which is expected to have a high oxygen percolation, barely showed hysteresis in current-voltage curve. On the other hand, the annealed sample showed a distinct hysteresis. The amount of oxygen in the sample and easiness of oxygen migration play an important role of the resistance switching properties.
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