Relationship between magneto-capacitance-voltage characteristics and magnetoresistance of Au∕Cr2O3∕Cr2O3−x∕FeCr∕CeO2∕Si metal-insulator-semiconductor capacitor

Abstract

Articles you may be interested inMetal-ferroelectric ( BiFeO 3 ) -insulator ( Y 2 O 3 ) -semiconductor capacitors and field effect transistors for nonvolatile memory applications Evaluation of capacitance-voltage characteristic and memory window of metal-ferroelectric-insulator-silicon capacitors Appl. Phys. Lett. 93, 213501 (2008); 10.1063/1.3021015 Characterization of metal-ferroelectric ( Bi Fe O 3 ) -insulator ( Zr O 2 ) -silicon capacitors for nonvolatile memory applications Appl.

Spin-charge multi injection mechanism of a magneto-electric capacitor

“…6) We have confirmed that the MECs can store electrons in the F.G., magneto-electrically. 7) We have also reported that the spin density of state matching between the F.G. and the MFL layer is important for the charge-injection process. 8) Based on these results, if we could change the spin density of state of the F.G. using a stronger ME effect than that of single Cr 2 O 3 , we could expect variations in the charge-injection process.…”

Influence of density of state of ferromagnetic filter layer in charge injection properties of Si metal–insulator–semiconductor capacitor with a magneto-electric gate insulator

“…5)7) Previously, we proposed the possibility of ME capacitors (MECs) consisting of Pt/Cr 2 O 3 (ME material:gate insulator)/Cr 2 O 3¹x (floating gate: F.G.)/Fe (magnetic filtering layer: MFL)/CeO 2 /Si. 8) By the application of electric and magnetic fields at the same time, charges injected into the F.G. were modulated depending on the magnetic field. Although the injected carrier was controlled by an external electric and magnetic field, the injection mechanism was still not clear.…”