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Dynamics of the photo‐excited carriers on the GaAs(100) surface have been studied by measuring the surface photo‐voltage effect (SPV) with the ultrafast time‐resolved photoemission spectroscopy. The fast SPV decay with a few picosecond lifetime has been observed on the n ‐type GaAs(100) surface. The lifetime of the fast decay component was almost independent with dopant levels, pump powers, and sample temperatures which mainly change the surface potential barrier in the band bending region. This result supports the SPV relaxation model of the hot electron because the time scale of the electron thermalization is considered to be less affected by the change of the surface potential barrier. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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