We experimentally studied the optimization of the hot-C + -ion implantation process for forming nano-SiC (silicon carbide) regions in a (100) Si-oninsulator substrate at various hot-C + -ion implantation temperatures and C + ion doses to improve photoluminescence (PL) intensity for future Sibased photonic devices. We successfully optimized the process by hot-C + -ion implantation at a temperature of about 700 °C and a C + ion dose of approximately 4 ' 10 16 cm %2 to realize a high intensity of PL emitted from an approximately 1.5-nm-thick C atom segregation layer near the surface-oxide/Si interface. Moreover, atom probe tomography showed that implanted C atoms cluster in the Si layer and near the oxide/Si interface; thus, the C content locally condenses even in the C atom segregation layer, which leads to SiC formation. Corrector-spherical aberration transmission electron microscopy also showed that both 4H-SiC and 3C-SiC nanoareas near both the surface-oxide/Si and buried-oxide/Si interfaces partially grow into the oxide layer, and the observed PL photons are mainly emitted from the surface SiC nano areas.

We experimentally studied SiC nano-dot formation in a bulk-Si substrate fabricated by the very simple processes of a hot-C+-ion implantation into (100) bulk-Si substrate and the following N2-annealing, and the photoluminescence (PL) properties for a future Si-based photonic device. We confirmed by a transmission electron microscope that cubic and hexagonal SiC dots are formed in a C+-ion implanted Si layer, and the SiC dot diameter (3–7 nm) and density (1–2 × 1012 cm−2) depend on the process conditions. We also observed very strong PL-intensity after N2-annealing, and the broad PL spectrum can be fitted by the sum of the PL-emissions from four different cubic and hexagonal SiC-polytypes with different exciton bandgaps. The PL-properties strongly depend on the N2-annealing temperature, and hot-C+-ion implantation temperature and dose. Consequently, we successfully optimize the process conditions to improve PL-intensity, as well as to control the PL-spectrum line shape in the near-UV/visible regions.

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