Hot-C⁺-Ion Implantation Optimization for Forming Nano-SiC Region at Surface (100)SOI Substrate

Nano-SiC region formation in (100) Si-on-insulator substrate: Optimization of hot-C+-ion implantation process to improve photoluminescence intensity

“…In addition, we studied nano-SiC material structures in the C atom segregation layer, by atom probe tomography (ATP) for the 3D distribution of C atoms, 22) corrector-spherical aberration transmission electron microscopy (CSTEM), and PL properties excited by a 3.8 eV laser at room temperature. 23) We successfully observed 3C-SiC and 4H-SiC nanoareas in the C segregation layer. We demonstrated that the PL intensity, which is emitted from the surface C segregation layer, strongly depends on hot-C-ion implantation temperature and C ion dose, but the PL peak photon energy E PH shows a weak dependence on hot-C-ion implantation temperature and C ion dose.…”

SiC nano-dot formation in bulk-Si substrate using hot-C+-ion implantation process

“…19,28) Recently, we have experimentally studied a Si 1-Y C Y layer fabricated by hot-12 C + -ion implantation into a (100) SOI with an approximately 100 nm thick surface oxide (SOX) at a high substrate temperature T and heavy C + ion dose D C in the wide range of 500 °C ⩽ T ⩽ 1000 °C, 5 × 10 12 ⩽ D C ⩽ 7 × 10 16 cm −2 (0.01 < Y ⩽ 0.3), and 0.5 ⩽ d S ⩽ 20 nm. [30][31][32][33] According to the self-cluster effects of ion implanted C atoms with the C cluster size of several nm in a crystal-Si (c-Si) layer [33][34][35] analyzed by atom probe tomography (ATP), C content in the c-Si locally condenses both at the SOX/Si and buried-oxide (BOX)/Si interfaces in c-Si layer, which leads to the local formation of SiC dots in c-Si. [30][31][32][33] The hot-C + -ion implantation process can reduce the ion implantation induced damage of the Si layer.…”

“…[30][31][32][33] According to the self-cluster effects of ion implanted C atoms with the C cluster size of several nm in a crystal-Si (c-Si) layer [33][34][35] analyzed by atom probe tomography (ATP), C content in the c-Si locally condenses both at the SOX/Si and buried-oxide (BOX)/Si interfaces in c-Si layer, which leads to the local formation of SiC dots in c-Si. [30][31][32][33] The hot-C + -ion implantation process can reduce the ion implantation induced damage of the Si layer. 31) Under a heavy C dope condition of higher than 2 × 10 16 cm −2 , X-ray photoelectron spectroscopy (XPS) and ATP showed that C atoms segregate with an approximately 2 nm thickness at both the SOX/Si and BOX/Si interfaces.…”

“…31) Under a heavy C dope condition of higher than 2 × 10 16 cm −2 , X-ray photoelectron spectroscopy (XPS) and ATP showed that C atoms segregate with an approximately 2 nm thickness at both the SOX/Si and BOX/Si interfaces. [31][32][33] In addition, the ATP analysis for 3D distribution of C atoms evaluated that C atoms clustered both in Si layer and the C segregation layer near the oxide/ Si interfaces. 32,33) As a result, the partial formation of cubic (3C-SiC) and hexagonal SiC (H-SiC) nano-dots was confirmed at both the SOX/Si and the BOX/Si interfaces, using corrector-spherical aberration transmission electron microscopy (CSTEM) and electron diffraction (ED) patterns that were obtained by fast Fourier transform (FFT) analysis of the lattice spots of CSTEM data.…”

“…[31][32][33] In addition, the ATP analysis for 3D distribution of C atoms evaluated that C atoms clustered both in Si layer and the C segregation layer near the oxide/ Si interfaces. 32,33) As a result, the partial formation of cubic (3C-SiC) and hexagonal SiC (H-SiC) nano-dots was confirmed at both the SOX/Si and the BOX/Si interfaces, using corrector-spherical aberration transmission electron microscopy (CSTEM) and electron diffraction (ED) patterns that were obtained by fast Fourier transform (FFT) analysis of the lattice spots of CSTEM data. 32,33) We also demonstrated very large E PH (≈3 eV) and very high PL intensities (I PL ) from the near-UV to visible regions (>350 nm) of SiC dots, which markedly increase with increasing the C content in Si layer.…”