T-shape filtered arc deposition (T-FAD) is specially designed for removing melted and un-melted macrodroplets from cathodic arc plasma and shows a superior ability to prepare droplet-free thin solid films.Furthermore, T-FAD has a feature that the film formation is done mostly by ions, since the plasma transported magnetically in T-FAD system is ionized nearly 100%.In the present study, by using T-FAD system with graphite cathode, carbon film was deposited on various rubbers. The film was verified as diamond-like carbon (DLC) by Raman spectroscopy. The DLC film was adhered well to the rubber and was not peeled off when the rubber was bended and stretched. The surface morphology, coefficient of friction, and adherence of the prepared DLC film were investigated. The surface of DLC film on rubber was not flat and has random texture structure. The coefficient of friction was lower than 0.2 in most cases. In pulling-off test (JIS K 6256) for adherence evaluation, some rubbers were broken without exfoliation of the DLC film, and the DLC films on other rubbers were peeled off at 1.3-kN/m load.
Preliminary experiments were conducted on Cu wiring or interconnect preparation in semiconductor devices using shielded cathodic arc deposition, comparing with the non-shielded method, normal shielded method, torus-type filtered arc deposition method (Torus-FAD), and T-shape filtered arc deposition method (T-FAD). The magnetically transported-shielded arc plasma was focused on a substrate using an electromagnetic coil and a permanent magnet. The principal results were as follows: (1) the evaporation rate increased with arc current;(2) the number of macrodroplets emitted from the Cu cathode reduced when the shield-substrate distance in the normal shielded method was shorter; (3) the deposition rate of the magnetically transported-shielded cathodic arc deposition (MT-SCAD) was 8 times higher than that of the normal shielded method; and (4) there was an insufficient filled void in the Cu film at the interconnect trench prepared by MT-SCAD, although there were no voids in the film prepared by Torus-FAD and T-FAD.キーワード:真空アーク蒸着,Cu 膜,シールド法,プラズマ磁気輸送,成膜速度,配線
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