Advanced large-scale integrated interconnect structure faces a major challenge in forming a thin and conformal diffusion barrier layer. We deposited a Mn oxide layer by thermal chemical vapor deposition (CVD) on SiO2 substrates and investigated deposition behavior and diffusion barrier property. A thin Mn oxide layer was formed with a uniform thickness of 2.6–10nm depending on deposition temperature between 100 and 400°C. Heat-treated samples of Cu/CVD-Mn oxide/SiO2 indicated no interdiffusion at 400°C for 100h. The CVD of the Mn oxide layer was found to be an excellent barrier formation process.
The effect of Ru crystal orientation on the deposition behavior of chemical vapor deposition (CVD) Cu was investigated. The crystal orientation of Ru films was modulated by adjusting sputtering temperature. Ru(001) and random orientation films were obtained by sputtering at 300 C and room temperature, respectively. CVD Cu on Ru with the (001) crystal orientation had a smooth morphology and a strong (111) peak. However, CVD Cu on the Ru film with the random orientation had a rough surface and a random orientation. A low lattice misfit between Cu(111) and Ru(001) realized a good morphology and a strong (111) orientation of CVD Cu films, which coincide with our lattice misfit concept.
Chemical vapor deposition of bis(ethylcyclopentadienyl)manganese, (EtCp) 2 Mn, was performed on a patterned interconnect structure to obtain a thin conformal layer with a good diffusion barrier property for advanced Si devices. Deposition of (EtCp) 2 Mn on SiO 2 formed a conformal layer of Mn oxide within a contact hole with a uniform thickness of 3 to 4 nm. Similar conformal formation of Mn oxide was obtained on SiO 2 in the vias and trenches of a dual-damascene structure. The deposition of (EtCp) 2 Mn on Cu, however, formed a solid solution with Cu. The solute Mn migrated toward the interface of Cu/SiO 2 to form Mn oxide.
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