Effect of Ru crystal orientation on the adhesion characteristics of Cu for ultra-large scale integration interconnects

Kim, Hoon; Koseki, Takafumi; Ohba, Takayuki; Ohta, Tomohiro; Kojima, Y.; Sato, Hiroshi; Hosaka, Shigetoshi; Shimogaki, Yukihiro

doi:10.1016/j.apsusc.2005.09.042

Cited by 25 publications

(16 citation statements)

References 18 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Crystal grain size and film texturing influence charge transfer in the film and hence directly impact the electrical properties of microelectronic devices . Previous studies have also shown that the crystallinity and surface morphology of Ru and RuO 2 strongly affect the growth of films on Ru/RuO 2 substrates, as well as the adhesion to the adjacent copper layer in interconnects . In addition, the catalytic activities of the surfaces are known to be crystal orientation dependent. , It is therefore useful to study the crystallographic orientation of deposited films to achieve the desired properties of the film for specific applications.…”

Section: Introductionmentioning

confidence: 99%

Size Dependent Effects in Nucleation of Ru and Ru Oxide Thin Films by Atomic Layer Deposition Measured by Synchrotron Radiation X-ray Diffraction

Methaapanon

Geyer

Brennan³

et al. 2013

Chem. Mater.

View full text Add to dashboard Cite

The crystal structure and growth behavior of Ru and RuO 2 on amorphous SiO 2 are measured during atomic layer deposition (ALD) by ex situ and in situ high-resolution synchrotron radiation X-ray diffraction (XRD). In situ XRD studies suggest that RuO 2 films grown by bis(2,4dimethylpentadienyl)ruthenium, Ru(DMPD) 2 , and oxygen at low temperature do not initially nucleate as RuO 2 . Despite large oxygen exposures during the ALD process, the initial nuclei form as hcp Ru. Then, after higher numbers of ALD cycles, crystalline rutile RuO 2 begins to appear. The results suggest that a critical Ru nucleus size is required to initiate the growth of RuO 2 . We speculate that a rate limiting step in the oxidation of Ru, possibly the formation of subsurface oxygen, is dependent upon the size of the Ru nuclei. Although the hcp Ru films are textured with a (002) preference in the growth direction, the rutile RuO 2 films once they nucleate have no preferential orientation.

show abstract

Section: Introductionmentioning

confidence: 99%

Size Dependent Effects in Nucleation of Ru and Ru Oxide Thin Films by Atomic Layer Deposition Measured by Synchrotron Radiation X-ray Diffraction

Methaapanon

Geyer

Brennan³

et al. 2013

Chem. Mater.

View full text Add to dashboard Cite

show abstract

“…Unfortunately, it has been observed in many experiments that copper tends to agglomerate on surfaces of some well‐performed diffusion barrier materials such as WN and TaN 4–6. One of the solutions to this problem is to insert a transition metal thin layer between the copper film and the barrier layer as a “glue” that is not only stable on the barrier surfaces but also binds with the copper film strongly to prevent copper aggregation 6, 7. The current technology to deposit the metal films primarily utilizes physical vapor deposition techniques 8.…”

Section: Introductionmentioning

confidence: 99%

On the relative stability of cobalt‐ and nickel‐based amidinate complexes against β‐migration

Zhou

et al. 2008

Int J of Quantum Chemistry

View full text Add to dashboard Cite

ABSTRACT:We present a first-principles study on the relative stability of cobaltand nickel-based amidinate complexes against ␤-migration using density functional theory. Factors that influence the reactivity of these compounds were carefully addressed and the calculated molecular structures are in excellent agreement with the available crystal structural data. Reaction energies as well as activation barriers of ␤-migration were evaluated. The predicted relative stability of the selected compounds is consistent with experimental observations.

show abstract

“…A 2 Â 2 cm 2 via patterned Si substrate with layered structure of ALD Ru(20 nm)/ALD WCN(4 nm)/SiO 2 (100 nm)/Si was used, because Ru has good wettability of Cu as a glue layer and can enhance electromigration resistance. [6][7][8] Substrates were used without any pretreatment. The vias were 50 to 220 nm in diameter and 1 m in depth, and thus their aspect ratios ranged from 4.5 to 20.…”

mentioning

confidence: 99%

Conformal Deposition and Gap-Filling of Copper into Ultranarrow Patterns by Supercritical Fluid Deposition

Momose

Sugiyama

Kondoh

et al. 2008

Appl. Phys. Express

Self Cite

View full text Add to dashboard Cite

Supercritical fluid deposition (SCFD) of Cu onto ultranarrow vias (50 to 220 nmφ and 1 µm depth) was studied with using angled polishing for future ultralarge scale integration metallization. SCFD conformally fabricated a smooth, continuous, and 10-nm-thick Cu film in ultranarrow vias. Excess H2 compared with the precursor as well as surface saturation of the precursor enabled uniform nucleation and conformal deposition. Highest H2 concentration in this study (0.39 mol/L) promoted the nucleation density, resulting in formation of a smooth and continuous film. In conclusion, SCFD successfully achieved complete filling without any voids onto via patterns.

show abstract

Effect of Ru crystal orientation on the adhesion characteristics of Cu for ultra-large scale integration interconnects

Cited by 25 publications

References 18 publications

Size Dependent Effects in Nucleation of Ru and Ru Oxide Thin Films by Atomic Layer Deposition Measured by Synchrotron Radiation X-ray Diffraction

Size Dependent Effects in Nucleation of Ru and Ru Oxide Thin Films by Atomic Layer Deposition Measured by Synchrotron Radiation X-ray Diffraction

On the relative stability of cobalt‐ and nickel‐based amidinate complexes against β‐migration

Conformal Deposition and Gap-Filling of Copper into Ultranarrow Patterns by Supercritical Fluid Deposition

Contact Info

Product

Resources

About