Influence of Crystal Orientation of Ru Under-Layer on Initial Growth of Copper Chemical Vapor Deposition

Kim, Hoon; Kojima, Y.; Sato, Hiroshi; Yoshii, Naoki; Hosaka, Shigetoshi; Shimogaki, Yukihiro

doi:10.1143/jjap.45.l233

Cited by 24 publications

(33 citation statements)

References 26 publications

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“…Redistribution subject to ECS terms of use (see 128.255.6.125 Downloaded on 2015-06-12 to IP By XRD we found that the ALD copper grown onto Ru(001)/hydrogen using either Cu-DI-1 at 150°C or Cu-KI-2 at 160°C gave fully oriented Cu(111) films, as shown in Figure 11 below for Cu-DI-1. Similar results have been reported for CVD copper deposited onto Ru(001) (11). The lattice mismatch between Cu(111) and Ru(001) is only 4% which probably accounts for the excellent adhesion observed for the Cu/Ru(001) laminates described above which all passed the Scotch tape test, typically pulling adhesive from the tape.…”

Section: Ald Coppersupporting

confidence: 81%

New Precursors for Copper ALD

Norman

Perez

et al. 2007

ECS Trans.

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A series of new non-fluorinated volatile copper precursors are described which have been designed for ALD of copper. These new molecules are low melting solids which show outstanding thermal stability and high chemical reactivity with molecular hydrogen to give pure copper films on ruthenium substrates in the temperature range of 130-200°C. Using ruthenium (001) substrates results in strongly adherent ALD copper films which are preferentially oriented (111) for optimal electrical performance.

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Section: Ald Coppersupporting

confidence: 81%

New Precursors for Copper ALD

Norman

Perez

et al. 2007

ECS Trans.

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“…7 In particular, plasma-enhanced atomic layer deposition ͑PEALD͒ can deposit high density films at low processing temperatures, which is critical for the growth of thin continuous Cu films that are resistant to agglomeration. 8,9 The agglomeration of chemically deposited thin Cu layers is a major roadblock to extending Cu seed layer technology. 10 However, while a number of groups have reported the growth of Cu films by ALD, the suitability of such processes for seed layer applications has not been established.…”

mentioning

confidence: 99%

Integration of Atomic Layer Deposition-Grown Copper Seed Layers for Cu Electroplating Applications

Eisenbraun

2009

J. Electrochem. Soc.

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A plasma-enhanced atomic layer deposition ͑PEALD͒ copper process, using Cu͑II͒ acetylacetonate and atomic hydrogen, was developed for Cu seed applications in nanoscale semiconductor processing. In this paper, the integration characteristics of PEALD Cu with electroplated Cu for advanced interconnect applications were investigated. Superconformal electroplated ͓electrochemical deposition ͑ECD͔͒ copper was demonstrated on PEALD Cu-seeded high aspect ratio patterned structures. The filling characteristics of ECD/PEALD-grown Cu were compared with those of a conventional ECD/physical vapor deposition ͑PVD͒-grown Cu stack. Void-free electroplated Cu was demonstrated on 60 and 35 nm patterned via structures using both atomic layer deposition Ru/TaN and conventional PVD Ta/TaN liner/barrier structures coupled with PEALD Cu seed layers. The resulting integration characteristics suggest that electroplated/PEALD Cu is a promising integration approach for emerging complementary metal oxide semiconductor metallization applications.Cu electroplating, or electrochemical deposition ͑ECD͒, is the interconnect conductor deposition method of choice for leading edge nanoelectronics. 1 A thin Cu seed layer is required before the Cu electroplating step to provide a more conductive substrate and to facilitate the nucleation of the electroplated Cu. 2 This seed layer is deposited over a barrier/liner stack, often TaN/Ta. 1 The conformality and coverage of the Cu seed layer over via and trench patterns is critical in determining whether the subsequent Cu electroplating is void free. 1 With the downscaling of interconnect feature dimensions, each individual layer within the metallization stack must become thinner and more conformal to comply with the overarching geometric constraints. 1 The ionized physical vapor deposition ͑iPVD͒ process currently employed becomes increasingly challenged to meet the seed/barrier requirements with respect to sidewall coverage and uniformity. 3 The low sidewall coverage, asymmetry, and overhang of the iPVD barrier/seed can result in electroplated Cu filling voids, which compromise the reliability and electrical performance of the Cu interconnects. 4,5 Therefore, a more conformal Cu seed layer is desirable to allow void-free filling of subsequent Cu electroplating in sub-45 nm interconnect structures.Atomic layer deposition ͑ALD͒ is a self-limiting thin-film deposition method based on alternating saturated surface chemical reactions, which allows conformal deposition of materials on high aspect ratio ͑AR͒ trenches. 6 ALD is a promising alternative barrier/seed deposition method because of its excellent conformality and precise thickness control capability. 7 In particular, plasma-enhanced atomic layer deposition ͑PEALD͒ can deposit high density films at low processing temperatures, which is critical for the growth of thin continuous Cu films that are resistant to agglomeration. 8,9 The agglomeration of chemically deposited thin Cu layers is a major roadblock to extending Cu seed layer technology. 10 However...

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“…20 nm Ru and Ta, which is deposited by sputtering method on TaN diffusion barrier, are used as substrate of Cu CVD. The sputtering temperature of Ru is 300 o C, which result in strong (001) orientation (20).…”

Section: Methodsmentioning

confidence: 99%

“…Thus, to deposit Cu seed layer having a good Cu adhesion and morphology, a barrier material must have no reactivity with fluorine and a good Cu wettability. In this point of view, Ru is the best candidate of a new barrier material due to its good Cu wettability and the property of noble metal (11)(12)(13)(14)(15)(16)(17)(18)(19)(20).…”

Section: Introductionmentioning

confidence: 99%

The Effect of Process Parameters on CVD Cu Seed Layer Deposition on Ru and Ta Under-layer

et al. 2007

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To deposit ultra-thin CVD Cu seed layer, Ru is evaluated as new barrier material, and the morphology and adhesion property of CVD Cu deposition on Ru are compared with that on Ta. CVD Cu films on Ru shows higher nuclei density than that on Ta. Lower (90 o C) deposition temperature, and high source concentration also improves the nucleation density of CVD Cu. About 20 nm of smooth and continuous CVD Cu seed layer is deposited on Ru under-layer at 90 o C and high source concentration condition. CVD Cu on Ru has a good adhesion property because impurity layer, which degrades the adhesion property of CVD Cu, is not formed at the interface. Introducing Ru under-layer and optimizing deposition condition enable thin and smooth CVD Cu seed layer deposition for the future Cu interconnects. .

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Influence of Crystal Orientation of Ru Under-Layer on Initial Growth of Copper Chemical Vapor Deposition

Cited by 24 publications

References 26 publications

New Precursors for Copper ALD

New Precursors for Copper ALD

Integration of Atomic Layer Deposition-Grown Copper Seed Layers for Cu Electroplating Applications

The Effect of Process Parameters on CVD Cu Seed Layer Deposition on Ru and Ta Under-layer

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