We report a new method for large-scale production of GaMnN nanobars, by ammoniating Ga2O3 films doped with Mn under flowing ammonia atmosphere at 1000 ∘ C. The Mn-doped GaN sword-like nanobars are a single-crystal hexagonal structure, containing Mn up to 5.43 atom%. Thickness is about 100 nm and with a width of 200-400 nm. The nanobars are characterized by x-ray diffraction, scanning electron microscopy, x-ray photoelectron spectroscopy, high-resolution transmission electron microscopy and photoluminescence. The GaN nanobars show two emission bands with a well-defined PL peak at 388 nm and 409 nm respectively. The large distinct redshift (409 nm) are comparable to pure GaN(370 nm) at room temperature. The red-shift photoluminescence is due to Mn doping. The growth mechanism of crystalline GaN nanobars is discussed briefly.
A silicon nanoporous pillar array (Si-NPA) is a silicon hierarchical structure with regularly patterned surface morphology. An array of bundled ZnO nanorods was grown based on Si-NPA by a catalyst-free thermal evaporation method. The morphology of ZnO/Si-NPA was found to be greatly affected by the growth parameters such as the grown temperature and the ratio nitrogen and oxygen. The room-temperature photoluminescence (PL) spectrum of ZnO/Si-NPA showed a violet emission at ∼410 nm and a blue-green emission around 500 nm, which were attributed to the PL of Si-NPA substrate and oxygen vacancies of ZnO, respectively. The results indicated that ZnO/Si-NPA is a promising optical material.
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