Fabrication of Mn-Doped GaN Nanobars

Abstract

We report a new method for large-scale production of GaMnN nanobars, by ammoniating Ga2O3 films doped with Mn under flowing ammonia atmosphere at 1000 ∘ C. The Mn-doped GaN sword-like nanobars are a single-crystal hexagonal structure, containing Mn up to 5.43 atom%. Thickness is about 100 nm and with a width of 200-400 nm. The nanobars are characterized by x-ray diffraction, scanning electron microscopy, x-ray photoelectron spectroscopy, high-resolution transmission electron microscopy and photoluminescence. The GaN nanobars show two emission bands with a well-defined PL peak at 388 nm and 409 nm respectively. The large distinct redshift (409 nm) are comparable to pure GaN(370 nm) at room temperature. The red-shift photoluminescence is due to Mn doping. The growth mechanism of crystalline GaN nanobars is discussed briefly.