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In this work, Ag-doped HfO2-based resistive random access memory (RRAM) with high on-off ratio, low-power consumption and forming-free properties was investigated. We propose the fabrication flow of the RRAM with via-hole structure. After doping Ag into HfO2 as the switching layer, the devices could execute resistive switching without a high-voltage forming process. The conduction mechanism was subsequently validated by a current fitting analysis. Electric field simulation was also utilized to observe the electric field distribution and finally a physical model was proposed to provide an explanation for the formation and dissolution of the filament.

In this work, a high-density hydrogen (HDH) treatment is proposed to reduce interface traps and enhance the efficiency of the passivated emitter rear contact (PERC) device. The hydrogen gas is compressed at pressure (~ 70 atm) and relatively low temperature (~ 200 °C) to reduce interface traps without changing any other part of the device’s original fabrication process. Fourier-transform infrared spectroscopy (FTIR) confirmed the enhancement of Si–H bonding and secondary-ion mass spectrometry (SIMS) confirmed the SiN/Si interface traps after the HDH treatment. In addition, electrical measurements of conductance-voltage are measured and extracted to verify the interface trap density (Dit). Moreover, short circuit current density (Jsc), series resistance (Rs), and fill factor (F.F.) are analyzed with a simulated light source of 1 kW M−2 global AM1.5 spectrum to confirm the increase in cell efficiency. External quantum efficiency (EQE) is also measured to confirm the enhancement in conversion efficiency between different wavelengths. Finally, a model is proposed to explain the experimental result before and after the treatment.

This paper investigates the effect of oxygen flow rates on the performance of the resistive random access memory (RRAM) of indium-tin-oxide (ITO)/ITO(O2)/TiN configuration. By using a co-sputtering deposition system with oxygen gas at different flow rates, oxygen-rich ITO thin films, such as the RRAM switching layer, can be realized. The relationship between oxygen flow rates and electrical characteristics is provided in this research. Further, the material analyses indicate that the oxygen exhibits different bonding characteristics. As a result, the device with the lower oxygen flow rate has better electrical characteristics and reliability. In addition, to explain the experimental results, the Schottky emission conduction mechanism for the high-resistance state and the Ohmic conduction mechanism for the low-resistance state are determined through the current fitting results, and appropriate models are proposed.

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