Reducing Interface Traps with High Density Hydrogen Treatment to Increase Passivated Emitter Rear Contact Cell Efficiency

Abstract

In this work, a high-density hydrogen (HDH) treatment is proposed to reduce interface traps and enhance the efficiency of the passivated emitter rear contact (PERC) device. The hydrogen gas is compressed at pressure (~ 70 atm) and relatively low temperature (~ 200 °C) to reduce interface traps without changing any other part of the device’s original fabrication process. Fourier-transform infrared spectroscopy (FTIR) confirmed the enhancement of Si–H bonding and secondary-ion mass spectrometry (SIMS) confirmed the SiN/Si interface traps after the HDH treatment. In addition, electrical measurements of conductance-voltage are measured and extracted to verify the interface trap density (Dit). Moreover, short circuit current density (Jsc), series resistance (Rs), and fill factor (F.F.) are analyzed with a simulated light source of 1 kW M−2 global AM1.5 spectrum to confirm the increase in cell efficiency. External quantum efficiency (EQE) is also measured to confirm the enhancement in conversion efficiency between different wavelengths. Finally, a model is proposed to explain the experimental result before and after the treatment.

Improved Resistive Switching Observed in Ti/Zr3N2/p-Si Capacitor via Hydrogen Passivation

“…The generation of N it in a memory device is commonly one of major failures to decrease in reliability [28]. Therefore, many groups have attempted to reduce N it through post-treatment using rapid thermal annealing (RTA) in H 2 gas ambient since it has a significant effect on reducing N it by passivating dangling bonds by H + [29]- [34]. N it attributes dispersions of operation voltage and current, resulting in uniformity and retention for charge trapping model [35], [36].…”

Effect of Hydrogen Plasma Treatment on Atomic Layer Deposited Silicon Nitride Film

“…Like the results of previous studies conducted on H 2 plasma treatment, the leakage current of deposited thin films was slightly reduced as the frequency of H 2 plasma treatment in process increased. 22,26 Figure 10b shows the capacitance analysis result of the deposited SiN x thin film. Overall, the capacitances did not change much with H 2 plasma treatment.…”

Enhancing gate turn-off thyristor blocking characteristics by low temperature defect passivation technology

“…This study uses a low temperature defect passivation technology (LTDPT) with supercritical fluid (SCF) treatment for hydrogenation to passivate bulk defects for the SiC-GTO thyristor. The literature has SCF has the characteristic of high penetration, which can introduce specific elements into defective materials to passivate broken bonds and improve device performance [24,25]. In this study, CO 2 was used as a solvent to dissolve H 2 in SCF-CO 2 and bring hydrogen ions into the material to passivate the broken bonds in the material, thereby achieving the effect of increasing the breakdown voltage, reducing the forward breakover voltage (V BO ) and on-state current.…”