In this paper, a transient voltage suppressor using a diode-activated SiGe heterojunction bipolar transistor (HBT) is proposed. The capacitance, DC current-voltage (I-V ) characteristics, and transmission line pulse (TLP) I-V characteristics of this combination device are investigated. An optimization guideline of the combination device is presented, verified by the corresponding simulation results, and a simple and effective method for achieving the target breakdown voltage is demonstrated. By combining the diode and SiGe HBT, the new structure exhibits both a low capacitance and a low breakdown voltage for protection against electrostatic discharge and electrical overstress in discrete or on-chip applications.
We establish explicit relations between the residual entropy of the onedimensional Ising chain with a nearest-neighbour ferromagnetic and & th-neighbour antiferromagnetic interaction, and the residual entropies of the one-dimensional king chain with many-neighboured antiferromagnetic interactions in the corresponding maximum critical fields. The obtained results are, in particular, relevant to the chains that appear in the axial next-nearest-neighbour Ising model.The axial next-nearest-neighbour Ising (or ANNNI) model in d dimensions consists of (d -1)dimensional layers of spins with nearest-neighbour ferromagnetic coupling, Jo > 0, within layers but competing ferromagnetic, J 1 , and antiferromagnetic, J2 < 0,
scite is a Brooklyn-based organization that helps researchers better discover and understand research articles through Smart Citations–citations that display the context of the citation and describe whether the article provides supporting or contrasting evidence. scite is used by students and researchers from around the world and is funded in part by the National Science Foundation and the National Institute on Drug Abuse of the National Institutes of Health.