Low-Capacitance Low-Voltage Transient Voltage Suppressor Using Diode-Activated SiGe Heterojunction Bipolar Transistor in SiGe Heterojunction Bipolar Transistor Bipolar Complementary Metal–Oxide–Semiconductor Process

Dai, Sheng-Huei; Peng, Jeng-Jie; Chen, Chia-Cheng; Lin, C.-H.; King, Ya‐Chin

doi:10.1143/jjap.48.04c082

Cited by 1 publication

(2 citation statements)

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“…The failure point investigation in the diode-activated SiGe HBT also shows that the weak spot in the back-to-back diode structure is near the collector. 6) To obtain the best tolerance current level in a back-to-back diode, the layout of both the forward-and the reverse-biased diode must be optimized. The outer loop, like the collector in the diodeactivated SiGe HBT, 6) is connected to the VDD while the center region, like the emitter in the diode-activated SiGe HBT, 6) is grounded, so that the reverse-biased diode can sustain higher current by increasing its area.…”

Section: Structure Of Low-capacitance Back-to-back Diodementioning

confidence: 99%

“…Since the bipolar junction transistor (BJT) essentially consists of two back-to-back diodes, the use of the high-performance SiGe heterojunction bipolar transistor (SiGe HBT) 4,5) to realize a low-capacitance TVS is proposed. 6) The TVS with a diode-activated SiGe HBT structure demonstrates superior surge handling capability with the help of a high-current-gain SiGe HBT. The SiGe HBTs are available only in the more expensive SiGe HBT bipolar CMOS (BiCMOS) process.…”

Section: Introductionmentioning

confidence: 99%

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Lateral Back-to-Back Diode for Low-Capacitance Transient Voltage Suppressor

Dai

Peng

Chen

et al. 2010

Jpn. J. Appl. Phys.

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We establish explicit relations between the residual entropy of the onedimensional Ising chain with a nearest-neighbour ferromagnetic and & th-neighbour antiferromagnetic interaction, and the residual entropies of the one-dimensional king chain with many-neighboured antiferromagnetic interactions in the corresponding maximum critical fields. The obtained results are, in particular, relevant to the chains that appear in the axial next-nearest-neighbour Ising model.The axial next-nearest-neighbour Ising (or ANNNI) model in d dimensions consists of (d -1)dimensional layers of spins with nearest-neighbour ferromagnetic coupling, Jo > 0, within layers but competing ferromagnetic, J 1 , and antiferromagnetic, J2 < 0,

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Section: Structure Of Low-capacitance Back-to-back Diodementioning

confidence: 99%