High-density ordered triangular Si nanopillars with sharp tips and varied
slopes were fabricated by reactive ion etching of ordered Ni nanodot arrays,
patterned with nanosphere lithography, on silicon. The slope and aspect
ratio of the nanopillars were controlled by variation of the mixing ratio of
CF4
and O2
in the etching gas. Excellent field emission properties are attributed to the high density
(9 × 108 cm−2), sharp (less than 10 nm) tips and well-controlled spacing between nanopillars so that the
antenna effect is minimized. Sharp tips and a flared base, which are advantageous for a
high field emission current and mechanical/thermal stability, respectively, can be
tailor-made depending on the applications.
Size selected cluster deposition on well characterized surfaces: Ag n / Pd (100) AIP Conf.Molecular dynamic simulation is used to investigate the influence of cluster size and cluster incident energy upon a Cu-Co magnetic film produced using the ionized cluster beam deposition process. The Co-Co, Cu-Cu, and Cu-Co atomic interactions are modeled using the many-body, tight-binding potential method, and the interface width is used to characterize the surface roughness properties at both transient and final state conditions. The results of this study indicate that the surface roughness of the deposited magnetic film is lower when a smaller incident cluster size is used. This observation is valid for all stages of the deposition process. Furthermore, it is determined that the nature of the relationship between cluster size and the produced film surface property is influenced by the cluster incident energy parameter. When the cluster incident energy is lower than an optimal value, it is observed that the produced film surface property is strongly dependent on the cluster size. However, when the value of the cluster incident energy falls between this optimal value and a critical cluster incident energy value, the correlation between cluster size and surface roughness is not so pronounced. Finally, when the cluster incident energy is higher than the critical value, it is noted that there is no significant relationship between cluster size and the resulting film surface property.
We built and studied the size scaling effect of perpendicular magnetic tunnel junctions (p-MTJs) with stepetch structure and dual-MgO/CoFeB interfaces. The step-etch structure yields symmetrical R-H loop, while dual-MgO/CoFeB interfaces raises cell anisotropy, thus the data retention time. The p-MTJ of 45-nm diameter shows spin-transfer torque switching voltage V sw with tight temporal sigma (σ (V sw ) <3.7%). The thermal stability factor is 60. Although the critical switching current (I c0 ) reduces with MTJ area, its density (J c0 ) increases. One plausible explanation of this observation is that the magnetization reversal of small MTJ follows the single-domain macrospin model, while that of the larger MTJ may be affected by the nucleation of domain during the magnetization reversal, and the wall motion leads to J c0 lowering; the other may be due to process-induced film damage. Fortunately, the switching efficiency (E b /|I c0 |) is higher for smaller p-MTJ.Index Terms-Magnetic tunnel junction (MTJ), spin transfer torque (STT), perpendicular magnetic anisotropy (PMA).
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