High-density ordered triangular Si nanopillars with sharp tips and varied
slopes were fabricated by reactive ion etching of ordered Ni nanodot arrays,
patterned with nanosphere lithography, on silicon. The slope and aspect
ratio of the nanopillars were controlled by variation of the mixing ratio of
CF4
and O2
in the etching gas. Excellent field emission properties are attributed to the high density
(9 × 108 cm−2), sharp (less than 10 nm) tips and well-controlled spacing between nanopillars so that the
antenna effect is minimized. Sharp tips and a flared base, which are advantageous for a
high field emission current and mechanical/thermal stability, respectively, can be
tailor-made depending on the applications.
Nd-doped silicon nanowires have been synthesized by a vapor transport and condensation method. The incorporation of neodymium within silicon nanowires was achieved by using NdCl3⋅6H2O powder as the doping source. Ferromagnetism and infrared photoluminescence at room temperature were discovered. The significant variation and versatility of the properties exhibited by the Nd-doped silicon nanowires are promising for exploitation for the advanced silicon-based devices.
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