In the semiconductor metallization process, the superior gap-fill capability of copper ͑Cu͒ electroplating is mainly due to external additives, such as bis-͑3-sodiumsulfopropyl disulfide͒ ͑SPS͒, which is used as an accelerator. This study demonstrates that the byproducts of SPS induced Cu defects after a chemical-mechanical-polishing ͑CMP͒ process. In conventional cyclic-voltammetric-stripping analysis, the byproducts generated from organic additives are very difficult to quantify. In this study, the authors used mass-spectrum analysis to quantify SPS byproducts and found that the SPS byproduct, 1,3-propanedisulfonic acid, correlated with the formation of Cu defects because it influenced the properties of electroplated Cu films and the chemical corrosion rate, then induced defects after the CMP process.
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