The near-SiC-interfaces of annealed Ni/SiC contacts were observed directly by high-resolution transmission electron microscopy (HRTEM). 1 nm native oxide layer was observed in the as-deposited contact interface. The native oxide layer cannot be removed at 650°C through rapid thermal annealing (RTA) and it was completely removed at 1000°C RTA. The residue of native oxide layer resulted in the Schottky characters. High temperature annealing (>950°C) not only removes the oxide layer in the near-SiC-interface, but also forms a well arranged flat Ni2Si/SiC interface, which contribute to the formation of ohmic behavior.
The photoconductive semiconductor switches (PCSS) were fabricated on V-doped semi-insulating 6H-SiC. We studied the effect of surface morphology on the on-state resistance of SiC PCSS. The SiC wafers with quite similar physical properties were processed by mechanical polishing, chemical mechanical polishing and H2 etching for producing different surface morphologies. All the SiC PCSS were excited by a 355 nm laser with a frequency of 10 Hz and a pulse intensity of 132 μJ/mm2. We found that the surface morphology had an obvious effect on the on-state resistance. The PCSS fabricated on mechanical polished SiC wafer with an average surface roughness (rms) of 1.0 nm showed the largest on-state resistance of 45.6 ohms, while a low value of 13.3 ohms was observed for the wafer processed by H2 etching at high temperature of 1550 °C.
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