Effect of Surface Morphology on the On-State Resistance of SiC Photoconductive Semiconductor Switches

Abstract

The photoconductive semiconductor switches (PCSS) were fabricated on V-doped semi-insulating 6H-SiC. We studied the effect of surface morphology on the on-state resistance of SiC PCSS. The SiC wafers with quite similar physical properties were processed by mechanical polishing, chemical mechanical polishing and H2 etching for producing different surface morphologies. All the SiC PCSS were excited by a 355 nm laser with a frequency of 10 Hz and a pulse intensity of 132 μJ/mm2. We found that the surface morphology had an obvious effect on the on-state resistance. The PCSS fabricated on mechanical polished SiC wafer with an average surface roughness (rms) of 1.0 nm showed the largest on-state resistance of 45.6 ohms, while a low value of 13.3 ohms was observed for the wafer processed by H2 etching at high temperature of 1550 °C.