The recent discovery of 2D magnets has induced various intriguing phenomena due to the modulated spin polarization by other degrees of freedoms such as phonons, interlayer stacking, and doping. The mechanism of the modulated spin-polarization, however, is not clear. In this work, we demonstrate theoretically and computationally that interlayer magnetic coupling of the CrI3 bilayer can be well controlled by intercalation and carrier doping. Interlayer atomic intercalation and carrier doping have been proven to induce an antiferromagnetic (AFM) to ferromagnetic (FM) phase transition in the spin-polarization of the CrI3 bilayer. Our results revealed that the AFM to FM transition induced by atom intercalation was a result of enhanced superexchange interaction between Cr atoms of neighboring layers. FM coupling induced by O intercalation mainly originates from the improved superexchange interaction mediated by Cr 3d-O 2p coupling. FM coupling induced by Li intercalation was found to be much stronger than that by O intercalation, which was attributed to the much stronger superexchange by electron doping than by hole doping. This comprehensive spin exchange mechanism was further confirmed by our results of the carrier doping effect on the interlayer magnetic coupling. Our work provides a deep understanding of the underlying spin exchange mechanism in 2D magnetic materials.
Transition metal carbides and nitrides (MXenes) have attracted significant attention in photoelectric applications due to their highly tunable electronic and optical properties influenced by a flexible compositional or surface functional group regulation. Ti3C2Tx MXenes (-F, -OH, =O terminated) used in previous ultrafast photonic studies are usually synthesized via a generic hydrofluoric acid (HF) etching strategy, which may cause numerous defects and thus impedes the optoelectronic properties of Ti3C2Tx. In this contribution, inspired by a much higher conductivity and carrier mobility of Ti3C2Tx (-F, -OH, =O, -Cl terminated) prepared from a minimally intensive layer delamination method (MILD) etching strategy, we further optimized it with a liquid-phase exfoliation (LPE) method to synthesize pure Ti3C2Tx quantum dots (QDs) for ultrafast photonic. Compared to the other QDs saturable absorber (SA) devices performed at 1550 nm, our SA device exhibited a relatively low saturation intensity (1.983 GW/cm−2) and high modulation depth (11.6%), allowing for a more easily mode-locked pulse generation. A distinguished ultrashort pulse duration of 466 fs centered at the wavelength of 1566.57 nm with a fundamental frequency of 22.78 MHz was obtained in the communication band. Considering the SA based on such a Ti3C2Tx QDs tapered fiber is the first exploration of Er3+-doped fiber laser (EDFL), this work will open up a new avenue for applications in ultrafast photonics.
ZnO/ZnMgO MQWs was employed as an active layer to fabricate p-GaN/MQWs/n-ZnO diode by molecular beam epitaxy. It showed sharp and efficient UV emission around 370 nm due to constraint of carriers in high-quality MQWs well layer.
The challenge related to degradation under ambient conditions has greatly constrained Ti3C2Tx quantum dots (QDs) from optical applications. Herein, Ti3C2Tx QDs with an average size within 10 nm was synthesized...
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