2021
DOI: 10.1039/d1ra06685d
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UV electroluminescence emissions from high-quality ZnO/ZnMgO multiple quantum well active layer light-emitting diodes

Abstract: ZnO/ZnMgO MQWs was employed as an active layer to fabricate p-GaN/MQWs/n-ZnO diode by molecular beam epitaxy. It showed sharp and efficient UV emission around 370 nm due to constraint of carriers in high-quality MQWs well layer.

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Cited by 9 publications
(1 citation statement)
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“…Taking into account their wide optical spectrum from the deep-blue to deep-ultraviolet regions, the compounds or alloys made of MgO and ZnO (ZMO) have been investigated for numerous applications, including light-emitting diode [ 1 ], photosensors [ 2 ], photocatalysts [ 3 ], photodetectors [ 4 ], solar cells [ 5 ] and thermoelectric devices [ 6 ]. Controlling the ratio between the Mg and Zn can realize bandgap engineering from 3.3 to 7.8 eV [ 7 , 8 , 9 , 10 ], making ZMO a potential material for many optoelectronic devices.…”
Section: Introductionmentioning
confidence: 99%
“…Taking into account their wide optical spectrum from the deep-blue to deep-ultraviolet regions, the compounds or alloys made of MgO and ZnO (ZMO) have been investigated for numerous applications, including light-emitting diode [ 1 ], photosensors [ 2 ], photocatalysts [ 3 ], photodetectors [ 4 ], solar cells [ 5 ] and thermoelectric devices [ 6 ]. Controlling the ratio between the Mg and Zn can realize bandgap engineering from 3.3 to 7.8 eV [ 7 , 8 , 9 , 10 ], making ZMO a potential material for many optoelectronic devices.…”
Section: Introductionmentioning
confidence: 99%