Demonstration of AlGaN/GaN high-electron-mobility transistors on 100 mm diameter Si(111) by plasma-assisted molecular beam epitaxy Appl. Phys. Lett. 97, 232107 (2010); 10.1063/1.3518717 Effect of the growth temperature and the AlN mole fraction on In incorporation and properties of quaternary IIInitride layers grown by molecular beam epitaxy J. Appl. Phys. 104, 083510 (2008); 10.1063/1.2999564III-nitride growth and characteristics on ferroelectric materials using plasma-assisted molecular beam epitaxy Two-dimensional electron gases induced by polarization charges in AlN/GaN heterostructure grown by plasmaassisted molecular-beam epitaxy

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Uni-traveling-carrier waveguide photodiodes (PDs) with a variable optical confinement mode size transformer are demonstrated. The optical mode is large at the input for minimal front-end saturation and the mode transforms as the light propagates so that the absorption profile is optimized for both high-power and high-speed performance. Two differently designed PDs are presented. PD A demonstrates a 3-dB bandwidth of 12.6 GHz, and saturation currents of 40 mA at 1 GHz and 34 mA at 10 GHz. PD B demonstrates a 3-dB bandwidth of 2.5 GHz, a saturation current greater than 100 mA at 1 GHz, a peak RF output power of + 19 dBm, and a third-order output intercept point of 29.1 dBm at a photocurrent of 60 mA.