Two-dimensional hexagonal boron nitride (hBN) has attracted large attentions as platforms for realizations for integrated nanophotonics and collective effort has been focused on the spin defect centers. Here, the temperature dependence of the resonance spectrum in the range of 5-600 K is investigated. The zero-field splitting (ZFS) parameter D is found to decrease monotonicly with increasing temperature and can be described by Varshni empirical equation perfectly, while E almost does not change. We systematically study the differences among different hBN nanopowders and provide an evidence of edge effects on ODMR of V − B defects. Considering the proportional relation between D and reciprocal of lattice volume (V −1 ), the thermal expansion might be the dominant reason for energy-level shifts. We also demonstrate that the V − B defects still exist stably at least at 600 K. Moreover, we propose a scheme for detecting laser intensity using the V − B defects in hBN nanopowders, which is based on the obvious dependence of its D value on laser intensity. Our results are helpful to gain insight into the spin properties of V − B and for the realizations of miniaturized, integrated thermal sensor.

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An experiment is performed to reconstruct an unknown photonic quantum state with a limited amount of copies. A semiquantum reinforcement learning approach is employed to adapt one qubit state, an “agent,” to an unknown quantum state, an “environment,” by successive single‐shot measurements and feedback, in order to achieve maximum overlap. The experimental learning device herein, composed of a quantum photonics setup, can adjust the corresponding parameters to rotate the agent system based on the measurement outcomes “0” or “1” in the environment (i.e., reward/punishment signals). The results show that, when assisted by such a quantum machine learning technique, fidelities of the deterministic single‐photon agent states can achieve over 88% under a proper reward/punishment ratio within 50 iterations. This protocol offers a tool for reconstructing an unknown quantum state when only limited copies are provided, and can also be extended to higher dimensions, multipartite, and mixed quantum state scenarios.

Quantum coherence is the most distinguished feature of quantum mechanics. It lies at the heart of the quantum-information technologies as the fundamental resource and is also related to other quantum resources, including entanglement. It plays a critical role in various fields, even in biology. Nevertheless, the rigorous and systematic resource-theoretic framework of coherence has just been developed recently, and several coherence measures are proposed. Experimentally, the usual method to measure coherence is to perform state tomography and use mathematical expressions. Here, we alternatively develop a method to measure coherence directly using its most essential behavior-the interference fringes. The ancilla states are mixed into the target state with various ratios, and the minimal ratio that makes the interference fringes of the "mixed state" vanish is taken as the quantity of coherence. We also use the witness observable to witness coherence, and the optimal witness constitutes another direct method to measure coherence. For comparison, we perform tomography and calculate l_{1} norm of coherence, which coincides with the results of the other two methods in our situation. Our methods are explicit and robust, providing a nice alternative to the tomographic technique.

Optically addressable spin defects in wide-band-gap semiconductors as promising systems for quantum information and sensing applications have recently attracted increased attention. Spin defects in two-dimensional materials are expected to show superiority in quantum sensing due to their atomic thickness. Here, we demonstrate that an ensemble of negatively charged boron vacancies (VB –) with good spin properties in hexagonal boron nitride (hBN) can be generated by ion implantation. We carry out optically detected magnetic resonance measurements at room temperature to characterize the spin properties of ensembles of VB – defects, showing a zero-field splitting frequency of ∼3.47 GHz. We compare the photoluminescence intensity and spin properties of VB – defects generated using different implantation parameters, such as fluence, energy, and ion species. With the use of the proper parameters, we can successfully create VB – defects with a high probability. Our results provide a simple and practicable method to create spin defects in hBN, which is of great significance for realizing integrated hBN-based devices.

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The spectral theorem of von Neumann has been widely applied in various areas, such as the characteristic spectral lines of atoms. It has been recently proposed that dynamical evolution also possesses spectral lines. As the most intrinsic property of evolution, the behavior of these spectra can, in principle, exhibit almost every feature of this evolution, among which the most attractive topic is non-Markovianity, i.e., the memory effects during evolution. Here, we develop a method to detect these spectra, and moreover, we experimentally examine the relation between the spectral behavior and non-Markovianity by engineering the environment to prepare dynamical maps with different non-Markovian properties and then detecting the dynamical behavior of the spectral values. These spectra will lead to a witness for essential non-Markovianity. We also experimentally verify another simplified witness method for essential non-Markovianity. Interestingly, in both cases, we observe the sudden transition from essential non-Markovianity to something else. Our work shows the role of the spectra of evolution in the studies of non-Makovianity and provides the alternative methods to characterize non-Markovian behavior.

The generation of single-photon emitters in hexagonal boron nitride around 2 eV emission is experimentally well-recognized; however the atomic nature of these emitters is unknown. In this paper, we use first-principles calculations to demonstrate that C2CN is a possible source of 2 eV single-photon emitter. We showcase the calculations of a complete set of static and dynamical properties related to defects, including exciton-defect couplings and electron-phonon interactions. In particular, we show it is critical to consider nonradiative processes when comparing with experimental lifetime for known 2 eV emitters. We find that C2CN has several key physical properties matching the ones of experimentally observed single-photon emitters. These include the zero-phonon line (2.13 eV), Huang-Rhys factor (1.35), photoluminescence lifetime (2.19 ns), phonon-sideband energy (180 meV), and photoluminescence spectrum. The identification of defect candidates for 2 eV emission paves the way for controllable single-photon emission generation.