Tin selenide (SnSe) has attracted much attention in the field of thermoelectrics since the discovery of the record figure of merit (ZT) of 2.6 ± 0.3 along the b‐axis of the material. The record ZT is attributed to an ultralow thermal conductivity that arises from anharmonicity in bonding. While it is known that nanostructuring offers the prospect of enhanced thermoelectric performance, there have been minimal studies in the literature to date of the thermoelectric performance of thin films of SnSe. In this work, preferentially orientated porous networks of thin film SnSe nanosheets are fabricated using a simple thermal evaporation method, which exhibits an unprecedentedly low thermal conductivity of 0.08 W m−1 K−1 between 375 and 450 K. In addition, the first known example of a working SnSe thermoelectric generator is presented and characterized.
Since the discovery of the record figure of merit (ZT) of 2.6 ± 0.3 in tin selenide (SnSe), the material has attracted much attention in the field of thermoelectrics. This paper reports a novel pseudo‐3D printing technique to fabricate bulk SnSe thermoelectric elements, allowing for the fabrication of standard configuration thermoelectric generators. In contrast to fabrication examples presented to date, this technique is potentially very low‐cost and allows for facile, scalable, and rapid fabrication. Bulk SnSe thermoelectric elements are produced and characterized over a wide range of temperatures. An element printed from an ink with 4% organic binder produces the highest performance, with a ZT value of 1.7 (±0.25) at 758 K. This is the highest ZT reported of any printed thermoelectric material, and the first bulk printed material to operate at this temperature. Finally, a proof‐of‐concept, all printed SnSe thermoelectric generator is presented, producing 20 µW at 772 K.
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