Metal halide perovskites have emerged as promising photovoltaic materials, but, despite ultralow thermal conductivity, progress on developing them for thermoelectrics has been limited. Here, we report the thermoelectric properties of all-inorganic tin based perovskites with enhanced air stability. Fine tuning the thermoelectric properties of the films is achieved by self-doping through the oxidation of tin (ΙΙ) to tin (ΙV) in a thin surface-layer that transfers charge to the bulk. This separates the doping defects from the transport region, enabling enhanced electrical conductivity. We show that this arises due to a chlorine-rich surface layer that acts simultaneously as the source of free charges and a sacrificial layer protecting the bulk from oxidation. Moreover, we achieve a figure-of-merit (ZT) of 0.14 ± 0.01 when chlorine-doping and degree of the oxidation are optimised in tandem.

To understand degradation routes and improve the stability of perovskite solar cells (PSCs), accelerated aging tests are needed. Here, we use elevated temperatures (up to 110 Celsius) to quantify the accelerated degradation of encapsulated CsPbI 3 PSCs under constant illumination. Incorporating a 2D Cs 2 PbI 2 Cl 2 capping layer between the perovskite active layer and hole-transport layer stabilizes the interface while increasing power conversion efficiency of the all-inorganic PSCs from 14.9% to 17.4%. Devices with this 2D capping layer did not degrade at 35 Celsius and required >2100 hours at 110 Celsius under constant illumination to degrade by 20% of their initial efficiency. Degradation acceleration factors based on the observed Arrhenius temperature dependence predict intrinsic lifetimes of 51,000 ± 7,000 hours (>5 years) operating continuously at 35 Celsius.

Tin selenide (SnSe) has attracted much attention in the field of thermoelectrics since the discovery of the record figure of merit (ZT) of 2.6 ± 0.3 along the b‐axis of the material. The record ZT is attributed to an ultralow thermal conductivity that arises from anharmonicity in bonding. While it is known that nanostructuring offers the prospect of enhanced thermoelectric performance, there have been minimal studies in the literature to date of the thermoelectric performance of thin films of SnSe. In this work, preferentially orientated porous networks of thin film SnSe nanosheets are fabricated using a simple thermal evaporation method, which exhibits an unprecedentedly low thermal conductivity of 0.08 W m−1 K−1 between 375 and 450 K. In addition, the first known example of a working SnSe thermoelectric generator is presented and characterized.

This work highlights routes towards controlled substitutional doping of halide perovskites on the B-site to optimise their thermoelectric properties.

Highly reduced graphene oxide (rGO) films are fabricated by combining reduction with smeared hydrazine at low temperature (e.g., 100 degrees C) and the multilayer stacking technique. The prepared rGO film, which has a lower sheet resistance ( approximately 160-500 Omega sq(-1)) and higher conductivity (26 S cm(-1)) as compared to other rGO films obtained by commonly used chemical reduction methods, is fully characterized. The effective reduction can be attributed to the large "effective reduction depth" in the GO films (1.46 microm) and the high C1s/O1s ratio (8.04). By using the above approach, rGO films with a tunable thickness and sheet resistance are achieved. The obtained rGO films are used as electrodes in polymer memory devices, in a configuration of rGO/poly(3-hexylthiophene) (P3HT):phenyl-C61-butyric acid methyl ester (PCBM)/Al, which exhibit an excellent write-once-read-many-times effect and a high ON/OFF current ratio of 10(6).