We present a micrometer scale, on-chip integrated, plasmonic enhanced graphene photodetector (GPD) for telecom wavelengths operating at zero dark current. The GPD is designed and optimized to directly generate a photovoltage and has an external responsivity∼12.2V/W with a 3dB bandwidth∼42GHz. We utilize Au split-gates with a∼100nm gap to electrostatically create a p-n-junction and simultaneously guide a surface plasmon polariton gap-mode. This increases light-graphene interaction and optical absorption and results in an increased electronic temperature and steeper temperature gradient across the GPD channel. This paves the way to compact, on-chip integrated, power-efficient graphene based photodetectors for receivers in tele and datacom modules.The ever-growing demand for global data traffic[1] is driving the development of next generation communication standards [2,3]. The increasing numbers of connected devices[4], the need for new functionalities, and the development of high-performance computing [5,6] require optical communication systems performing at higher speeds, with improved energy-efficiency, whilst maintaining scalability and cost-effective manufacturing. Si photonics[7-9] offers the prospect of dense (nanoscale) integration[10] relying on mature, low-cost (based on complementary metal-oxide-semiconductor (CMOS) fabrication processes) manufacturing [8,9], making it one of the key technologies for short-reach (<10km) optical interconnects[11] beyond currently employed lithium niobate[12] and indium phosphate[13]. A variety of functionalities have been developed and demonstrated in Si photonics for local optical interconnects[11]. Electro-optic modulators based on carrier-depletion (phase-modulation) in Si[14, 15] or the Franz-Keldysh effect[16] (amplitude-modulation) in strained Si-Ge[17, 18] encode information into optical signals at telecom wavelengths (λ =1.3-1.6µm). On the receiver side, Ge[19] or bonded III-V[20, 21] photodetectors (PD) are needed for optical-to-electrical signal conversion, since the telecom photon energies are not sufficient for direct (band-to-band) photodetection in Si[22].On-chip integrated Ge PDs [23][24][25][26][27] are standard components in Si photonics foundries [8,9,22]. Their external responsivities (in A/W), R I = I ph /P in , where I ph is the photocurrent and P in is the incident optical power, can exceed 1A/W [8,23] and their bandwidth can reach 60GHz [25][26][27]. Following the development of high temperature (> 600 • C) [19] heterogeneous integration of Ge-on-Si using epitaxial growth and cyclic thermal annealing [19,28,29], the concentration of defects and threading dislocations in Ge epilayers and at Si/Ge interfaces can be reduced [19], resulting in low (<10nA[9, 27]) dark current in waveguide integrated Ge p-i-n photodiodes [24,27]. However, Ge-on-Si integration is a complex process [19,22,29], as the lattice mismatch between Si and Ge [19], ion implantation [23,25], thermal budget (i.e. thermal energy transfer to the wafer) management [22], and the non-plan...

Black phosphorous (BP) is a layered semiconductor with high carrier mobility, anisotropic optical response and wide bandgap tunability. In view of its application in optoelectronic devices, understanding transient photo-induced effects is crucial. Here, we investigate by time- and angle-resolved photoemission spectroscopy BP in its pristine state and in the presence of Stark splitting, chemically induced by Cs ad-sorption. We show that photo-injected carriers trigger bandgap renormalization, and a concurrent valence band flattening caused by Pauli blocking. In biased samples, photo-excitation leads to a long-lived (ns) surface photovoltage of few hundreds mV that counterbalances the Cs-induced surface band bending. This allows us to disentangle bulk from surface electronic states, and to clarify the mechanism underlying the band inversion observed in bulk samples.

Bio-inspired molecular communications (MC), where molecules are used to transfer information, is the most promising technique to realise the Internet of Nano Things (IoNT), thanks to its inherent biocompatibility, energy-efficiency, and reliability in physiologically-relevant environments. Despite a substantial body of theoretical work concerning MC, the lack of practical micro/nanoscale MC devices and MC testbeds has led researchers to make overly simplifying assumptions about the implications of the channel conditions and the physical architectures of the practical transceivers in developing theoretical models and devising communication methods for MC. On the other hand, MC imposes unique challenges resulting from the highly complex, nonlinear, time-varying channel properties that cannot be always tackled by conventional information and communication tools and technologies (ICT). As a result, the reliability of the existing MC methods, which are mostly adopted from electromagnetic communications and not validated with practical testbeds, is highly questionable. As the first step to remove this discrepancy, in this study, we report on the fabrication of a nanoscale MC receiver based on graphene field-effect transistor biosensors. We perform its ICT characterisation in a custom-designed microfluidic MC system with the information encoded into the concentration of single-stranded DNA molecules. This experimental platform is the first practical implementation of a micro/nanoscale MC system with nanoscale MC receivers, and can serve as a testbed for developing realistic MC methods and IoNT applications.

Layered materials (LMs) produced by liquid phase exfoliation (LPE) can be used as building blocks for optoelectronic applications. However, when compared with mechanically exfoliated flakes, or films prepared by chemical vapor deposition (CVD), LPE-based printed optoelectronic devices are limited by mobility, defects and trap states. Here, we present a scalable fabrication technique combining CVD with LPE LMs to overcome such limitations. We use black phosphorus (BP) inks, inkjet-printed on graphene on Si/SiO$_{2}$, patterned by inkjet printing based lithography, and source and drain electrodes printed with an Ag ink, to prepare photodetectors (PDs). These have an external responsivity (R$_{ext}$)$\sim$337A/W at 488nm, and operate from visible ($\sim$488nm) to short-wave infrared ($\sim$2.7$\mu$m, R$_{ext}\sim$48mA/W). We also use this approach to fabricate flexible PDs on polyester fabric, one of the most common used in textiles, achieving R$_{ext}\sim$6mA/W at 488nm for an operating voltage of 1V. Thus, our combination of scalable CVD and LPE techniques via inkjet printing is promising for wearable and flexible applications