Two-dimensional (2D) transition-metal dichalcogenides (2D TMDs) in the form of MX2 (M: transition metal, X: chalcogen) exhibit intrinsically anisotropic layered crystallinity wherein their material properties are determined by constituting M and X elements. 2D platinum diselenide (2D PtSe2) is a relatively unexplored class of 2D TMDs with noble-metal Pt as M, offering distinct advantages over conventional 2D TMDs such as higher carrier mobility and lower growth temperatures. Despite the projected promise, much of its fundamental structural and electrical properties and their interrelation have not been clarified, and so its full technological potential remains mostly unexplored. In this work, we investigate the structural evolution of large-area chemical vapor deposition (CVD)-grown 2D PtSe2 layers of tailored morphology and clarify its influence on resulting electrical properties. Specifically, we unveil the coupled transition of structural–electrical properties in 2D PtSe2 layers grown at a low temperature (i.e., 400 °C). The layer orientation of 2D PtSe2 grown by the CVD selenization of seed Pt films exhibits horizontal-to-vertical transition with increasing Pt thickness. While vertically aligned 2D PtSe2 layers present metallic transports, field-effect-transistor gate responses were observed with thin horizontally aligned 2D PtSe2 layers prepared with Pt of small thickness. Density functional theory calculation identifies the electronic structures of 2D PtSe2 layers undergoing the transition of horizontal-to-vertical layer orientation, further confirming the presence of this uniquely coupled structural-electrical transition. The advantage of low-temperature growth was further demonstrated by directly growing 2D PtSe2 layers of controlled orientation on polyimide polymeric substrates and fabricating their Kirigami structures, further strengthening the application potential of this material. Discussions on the growth mechanism behind the horizontal-to-vertical 2D layer transition are also presented.

The eutectic Sn-Zn-Al solder alloy was used [composition: 91Sn-9(5Al-Zn)] to investigate the intermetallic compounds (IMCs) formed between solder and a Cu substrate. Scanning electron microscope, transmission electron microscope, and electron diffraction analysis were used to study the IMCs between solder and a Cu substrate. The ␥-Cu 5 Zn 8 and ␥Ј-Cu 9 Al 4 IMCs were found at the Sn-Zn-Al/Cu interface. Thermodynamic calculation can explain the formation of ␥-Cu 5 Zn 8 and ␥Ј-Cu 9 Al 4 IMCs instead of Cu-Sn compounds. The formation and growth of ␥Ј-Cu 9 Al 4 IMC at 423 K resulted in the decrease of adhesion strength at the interface of solder and a Cu substrate, where the Kirkendall voids were severely formed. As the heating time increased up to 1000 h at 423 K, the adhesion strength between the eutectic Sn-Zn-Al solder and a Cu substrate decreased from 7.6 ± 0.7 MPa to 4.4 ± 0.8 MPa.

Improving the wetting ability of Ag on chemically heterogeneous oxides is technically important to fabricate ultrathin, continuous films that would facilitate the minimization of optical and electrical losses to develop qualified transparent Ag film electrodes in the state-of-the-art optoelectronic devices. This goal has yet to be attained, however, because conventional techniques to improve wetting of Ag based on heterogeneous metallic wetting layers are restricted by serious optical losses from wetting layers. Herein, we report on a simple and effective technique based on the partial oxidation of Ag nanoclusters in the early stages of Ag growth. This promotes the rapid evolution of the subsequently deposited pure Ag into a completely continuous layer on the ZnO substrate, as verified by experimental and numerical evidence. The improvement in the Ag wetting ability allows the development of a highly transparent, ultrathin (6 nm) Ag continuous film, exhibiting an average optical transmittance of 94% in the spectral range 400-800 nm and a sheet resistance of 12.5 Ω sq, which would be well-suited for application to an efficient front window electrode for flexible solar cell devices fabricated on polymer substrates.

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Stretchable organic light-emitting diodes are ubiquitous in the rapidly developing wearable display technology. However, low efficiency and poor mechanical stability inhibit their commercial applications owing to the restrictions generated by strain. Here, we demonstrate the exceptional performance of a transparent (molybdenum-trioxide/gold/molybdenum-trioxide) electrode for buckled, twistable, and geometrically stretchable organic light-emitting diodes under 2-dimensional random area strain with invariant color coordinates. The devices are fabricated on a thin optical-adhesive/elastomer with a small mechanical bending strain and water-proofed by optical-adhesive encapsulation in a sandwiched structure. The heat dissipation mechanism of the thin optical-adhesive substrate, thin elastomer-based devices or silicon dioxide nanoparticles reduces triplet-triplet annihilation, providing consistent performance at high exciton density, compared with thick elastomer and a glass substrate. The performance is enhanced by the nanoparticles in the optical-adhesive for light out-coupling and improved heat dissipation. A high current efficiency of ~82.4 cd/A and an external quantum efficiency of ~22.3% are achieved with minimum efficiency roll-off.