Channel
current conduction modulation with the spontaneous polarization
of ferroelectric films in ferroelectric field-effect transistors (FeFETs)
has been widely investigated. Low interface quality and thermodynamic
instability owing to the presence of dangling bonds in the conventional
ferroelectrics have limited the memory retention and endurance of
FeFETs. This, in turn, prevents their commercialization. However,
the atomically thin nature of 2D ferroelectric, semiconducting, and
insulating films facilitate the achievement of trap-free interfaces
as van der Waal heterostructures (vdWHs) to develop FeFETs with long
data retention and endurance characteristics. Here, we demonstrate
a 2D vdWH FeFET fabricated with ferroelectric CuInP2S6 (CIPS), hexagonal boron nitride (h-BN) as the dielectric,
and InSe as the ferroelectric semiconductor channel. The device shows
an excellent performance as nonvolatile memory (NVM) with its large
memory window (4.6 V at a voltage sweep of 5 V), high drain current
on/off ratio (>104), high endurance, and long data retention
(>104 s). These results demonstrate the considerable
potential
of vdWHs for the development of FeFETs for logic and NVM applications.
To address the demands of emerging data-centric computing applications, ferroelectric field-effect transistors (Fe-FETs) are considered the forefront of semiconductor electronics owing to their energy and area efficiency and merged logic-memory functionalities. Herein, the fabrication and application of an Fe-FET, which is integrated with a van der Waals ferroelectrics heterostructure (CuInP 2 S 6 /𝜶-In 2 Se 3 ), is reported. Leveraging enhanced polarization originating from the dipole coupling of CIPS and 𝜶-In 2 Se 3 , the fabricated Fe-FET exhibits a large memory window of 14.5 V at V GS = ±10 V, reaching a memory window to sweep range of ≈72%. Piezoelectric force microscopy measurements confirm the enhanced polarization-induced wider hysteresis loop of the double-stacked ferroelectrics compared to single ferroelectric layers. The Landau-Khalatnikov theory is extended to analyze the ferroelectric characteristics of a ferroelectric heterostructure, providing detailed explanations of the hysteresis behaviors and enhanced memory window formation. The fabricated Fe-FET shows nonvolatile memory characteristics, with a high on/off current ratio of over 10 6 , long retention time (>10 4 s), and stable cyclic endurance (>10 4 cycles). Furthermore, the applicability of the ferroelectrics heterostructure is investigated for artificial synapses and for hardware neural networks through training and inference simulation. These results provide a promising pathway for exploring low-dimensional ferroelectronics.
Ferroelectric Field‐Effect‐Transistors
In article number
2200566
, Sungjoo Lee and co‐workers report on the fabrication and application of a ferroelectric transistor integrated with a van der Waals ferroelectrics heterostructure (CuInP
2
S
6
/α‐In
2
Se
3
). Leveraging enhanced polarization originating from the dipole coupling, the fabricated device exhibits a large memory window and nonvolatile memory characteristics with a long retention time and stable cyclic endurance, providing a promising pathway for exploring low‐dimensional ferroelectronics.
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