A new type of ester-based cationic surfactant having a quinuclidinolium headgroup has been synthesized starting from linear fatty alcohols and has been characterized using spectroscopic techniques. The self-aggregation and thermodynamic properties of these surfactants have been investigated by pendant-drop surface tensiometry and conductivity measurements. The liquid crystalline behaviors of these surfactants were investigated by small-angle X-ray scattering (SAXS) technique. The quinuclidinolium headgroup demonstrated a unique ability to interlock among themselves thus affecting the physicochemical properties of surfactants in aqueous solution. The current research finding supports the new concept of headgroup interlocking which is supported by 1D and 2D NMR studies.
The micellar solution and the lyotropic
liquid crystalline phases
formed by gemini surfactants containing morpholinium headgroups are
investigated for their self-aggregation and physicochemical properties
in water. These gemini surfactants demonstrated good surface activity
because they are able to undergo micellization at lower concentration
and form nanosized micellar aggregates in dilute aqueous solution.
The binary mixture of the morpholinium gemini surfactant–water
system is investigated over a wide range of concentrations. The micellar
solution of the morpholinium gemini surfactants demonstrated Newtonian
fluidlike behavior between 10 and 50 wt % as the observed viscosities
were independent of the applied shear rate. At higher concentration,
morpholinium geminis formed self-assembled lyotropic phases in water.
These liquid crystalline phases were characterized by small-angle
X-ray scattering and polarized optical microscopy techniques.
Technologically important low-resistivity bulk Si has been usually produced by the traditional Czochralski growth method. We now explore a novel method to obtain low-resistivity bulk Si by hot-pressing B- and P-hyperdoped Si nanocrystals (NCs). In this work bulk Si with the resistivity as low as ∼ 0.8 (40) mΩ•cm has been produced by hot pressing P (B)-hyperdoped Si NCs. The dopant type is found to make a difference for the sintering of Si NCs during the hot pressing. Bulk Si hot-pressed from P-hyperdoped Si NCs is more compact than that hot-pressed from B-hyperdoped Si NCs when the hot-pressing temperature is the same. This leads to the fact that P is more effectively activated to produce free carriers than B in the hot-pressed bulk Si. Compared with the dopant concentration, the hot-pressing temperature more significantly affects the structural and electrical properties of hot-pressed bulk Si. With the increase of the hot-pressing temperature the density of hot-pressed bulk Si increases. The highest carrier concentration (lowest resistivity) of bulk Si hot-pressed from B- or P-hyperdoped Si NCs is obtained at the highest hot-pressing temperature of 1050 °C. The mobility of carriers in the hot-pressed bulk Si is low (≤ ∼ 30 cm-2V-1s-1) mainly due to the scattering of carriers induced by structural defects such as pores.
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