The influence of growth temperature Ts (300–773 K) on the structural phase ordering, static and dynamic magnetization behaviour has been investigated in ion beam sputtered full Heusler alloy Co2FeAl (CFA) thin films on industrially important Si(100) substrate. The B2 type magnetic ordering is established in these films based on the clear observation of the (200) diffraction peak. These ion beam sputtered CFA films possess very small surface roughness of the order of subatomic dimensions (<3 Å) as determined from the fitting of XRR spectra and also by AFM imaging. This is supported by the occurrence of distinct Kiessig fringes spanning over the whole scanning range (~4°) in the x-ray reflectivity (XRR) spectra. The Gilbert damping constant α and effective magnetization 4πMeff are found to vary from 0.0053 ± 0.0002 to 0.0015 ± 0.0001 and 13.45 ± 00.03 kG to 14.03 ± 0.04 kG, respectively. These Co2FeAl films possess saturation magnetization ranging from 4.82 ± 0.09 to 5.22 ± 0.10 μB/f.u. consistent with the bulk L21-type ordering. A record low α-value of 0.0015 is obtained for Co2FeAl films deposited on Si substrate at Ts ~ 573 K.

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Half-metallicity and low magnetic damping are perpetually sought for in spintronics materials and full Heusler alloys in this respect provide outstanding properties. However, it is challenging to obtain the well-ordered half-metallic phase in as-deposited full Heusler alloys thin films and theory has struggled to establish a fundamentals understanding of the temperature dependent Gilbert damping in these systems. Here we present a study of the temperature dependent Gilbert damping of differently ordered as-deposited Co 2 FeAl full Heusler alloy thin films. The sum of inter-and intraband electron scattering in conjunction with the finite electron lifetime in Bloch states govern the Gilbert damping for the wellordered phase in contrast to the damping of partially-ordered and disordered phases which is governed by interband electronic scattering alone. These results, especially the ultralow room temperature intrinsic damping observed for the well-ordered phase provide new fundamental insights to the physical origin of the Gilbert damping in full Heusler alloy thin films.

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Magnetic skyrmions are topological spin-textures having immense potential for energy efficient spintronic devices. Here, we report the observation of stable skyrmions in unpatterned Ta/Co2FeAl(CFA)/MgO thin film heterostructures at room temperature in remnant state employing magnetic force microscopy. It is shown that these skyrmions consisting of ultrathin ferromagnetic CFA Heusler alloy result from strong interfacial Dzyaloshinskii-Moriya interaction (i-DMI) as evidenced by Brillouin light scattering measurements, in agreement with the results of micromagnetic simulations. We also emphasize on room temperature observation of multiple skyrmions which can be stabilized for suitable combinations of CFA layer thickness, perpendicular magnetic anisotropy, and i-DMI. These results provide a significant step towards designing of room temperature spintronic devices based on skyrmions in full Heusler alloy based thin films.

Anti-phase boundaries (APBs) normally form as a consequence of the initial growth conditions in all spinel ferrite thin films. The presence of APBs in epitaxial films of the inverse spinel Fe 3 O 4 alters their electronic and magnetic properties due to strong antiferromagnetic (AF) interactions across these boundaries. The effect of using in-situ electric field assisted growth on the migration of APBs in hetero epitaxial Fe 3 O 4 (100)/MgO(100) thin films have been explored in the present work. The electric field assisted growth is found to reduce the AF interactions across APBs and as a consequence APBs free thin film like properties are obtained, which have been probed by electronic, magnetic and structural characterization. An increase in energy associated with the nucleation and/or early stage of the growth and, therefore, a corresponding increase in surface mobility of the ad-atoms play a critical role in controlling the density of APBs. This innovative technique can be employed to grow epitaxial spinel thin films with controlled AF interactions across APBs. *

The spin pumping mechanism and associated interfacial Gilbert damping are demonstrated in ion-beam sputtered Co2FeAl (CFA)/Mo bilayer thin films employing ferromagnetic resonance spectroscopy. The dependence of the net spin current transportation on Mo layer thickness, 0 to 10 nm, and the enhancement of the net effective Gilbert damping are reported. The experimental data has been analyzed using spin pumping theory in terms of spin current pumped through the ferromagnet/nonmagnetic metal interface to deduce the effective spin mixing conductance and the spin-diffusion length, which are estimated to be 1.16(±0.19)×10 19 m −2 and 3.50±0.35nm, respectively. The damping constant is found to be 8.4(±0.3)×10 -3 in the Mo(3.5nm) capped CFA(8nm) sample corresponding to a ~42% enhancement of the original Gilbert damping (6.0(±0.3)×10 -3 ) in the uncapped CFA layer. This is further confirmed by inserting a Cu dusting layer which reduces the spin transport across the CFA/Mo interface. The Mo layer thickness dependent net spin current density is found to lie in the range of 1-3 MAm -2 , which also provides additional quantitative evidence of spin pumping in this bilayer thin film system.