We present a laser plasma based x-ray microscope for the water window employing a high-average power laser system for plasma generation. At 90 W laser power a brightness of 7.4 x 10(11) photons/(s x sr x μm(2)) was measured for the nitrogen Lyα line emission at 2.478 nm. Using a multilayer condenser mirror with 0.3 % reflectivity 10(6) photons/(μm(2) x s) were obtained in the object plane. Microscopy performed at a laser power of 60 W resolves 40 nm lines with an exposure time of 60 s. The exposure time can be further reduced to 20 s by the use of new multilayer condenser optics and operating the laser at its full power of 130 W.

The formation of interlayer transition zones (ITZs) in sputtered Mo/Si multilayer structures was studied by means of cross-section electron microscopy and grazing incidence reflectivity measurements. For the evaluation and calculation of interface effects the multiperiodic design of Mo/Si structure was used. It was found that the thickness asymmetry of ITZs (Mo-on-Si and Si-on-Mo) in Mo/Si multilayer structures depends on the degree of perfection of the crystalline structure of the molybdenum layer. A transition from asymmetrical to symmetrical ITZs with a disordering of the molybdenum crystalline structure was shown. A model for the formation mechanism of asymmetrical ITZs at the different interfaces in Mo/Si multilayer structures is suggested. According to this model, ITZ formation at the Mo-on-Si interface is controlled by the surface diffusion of Si atoms on the growing molybdenum surface. In contrast, ITZ formation at the Si-on-Mo interface is determined by the bulk diffusion of Si atoms in textured molybdenum grain

No abstract

No abstract

(2012) Soft x-ray reflectometry, hard x-ray photoelectron spectroscopy and transmission electron microscopy investigations of the internal structure of TiO 2 (Ti)/SiO 2 /Si stacks, Science AbstractWe developed a mathematical analysis method of reflectometry data and used it to characterize the internal structure of TiO 2 /SiO 2 /Si and Ti/SiO 2 /Si stacks. Atomic concentration profiles of all the chemical elements composing the samples were reconstructed from the analysis of the reflectivity curves measured versus the incidence angle at different soft x-ray reflection (SXR) photon energies. The results were confirmed by the conventional techniques of hard x-ray photoelectron spectroscopy (HXPES) and high-resolution transmission electron microscopy (HRTEM). The depth variation of the chemical composition, thicknesses and densities of individual layers extracted from SXR and HXPES measurements are in close agreement and correlate well with the HRTEM images.