We demonstrate a fully printed transistor with a planar triode geometry, using nanoparticulate silicon as the semiconductor material, which has a unique mode of operation as an electrically controlled two-way (double throw) switch. A signal applied to the base changes the direction of the current from between the collector and base to between the base and emitter. We further show that the switching characteristic results from the activated charge transport in the semiconductor material, and that it is independent of the dominant carrier type in the semiconductor and the nature of the junction between the semiconductor and the three contacts. The same equivalent circuit, and hence similar device characteristics, can be produced using any other material combination with non-linear current-voltage characteristics, such as a suitable combination of semiconducting and conducting materials, such that a Schottky junction is present at all three contacts. C 2013 Author(s)
This work reports on the fabrication and characterization of all screen printed logic gates. The logic gates presented in this work were printed on plain paper (80 gsm) and employed milled p-silicon as the active layer. The active material used presented a varistor-like electrical behavior in an extended range of temperatures from 340-10 K. Current driven switches were produced and used as the building blocks for the logic gates. The fundamental OR and AND boolean logic gates were demonstrated at room temperature. Their various input and output voltage levels are presented. It was also shown that the active materials and switches presented a better electrical performance at cryogenics temperature. Thus, these logic gates have the potential to be applied for use in a cryogenics environment. The advantages and limitations of the printed logic gates are discussed by comparing them to conventional logic gates.
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