We show that ideal memristors—devices whose resistance is proportional to the charge that flows through them—can be realized using spin torque-driven viscous magnetization dynamics. The latter can be accomplished in the spin liquid state of thin-film heterostructures with frustrated exchange, where the memristive response is tunable by proximity to the glass transition, while current-induced Joule heating facilitates non-volatile operation and second-order memristive functionality beneficial for neuromorphic applications. Ideal memristive behaviors can be achieved in other systems characterized by viscous dynamics of physical, electronic, or magnetic degrees of freedom.
In viscous dynamics, velocity is proportional to the force. An ideal memristor is a device whose resistance changes at a rate proportional to the driving input. We present a proof-of-principle demonstration of the connection between viscous dynamics and memristive functionality by utilizing a thin-film ferromagnet/antiferromagnet bilayer, where viscous magnetization dynamics results from the frustration at the magnetic interface, and driving is provided by an external magnetic field. Thanks to the atomic scale of frustration effects, the presented approach is amenable to downscaling. It can also be adapted for electronic driving by spin torque, making it attractive for applications in neuromorphic circuits.
В работе будут представлены экспериментальные данные, демонстрирующие наличие проблемы с повторяемостью и воспроизводимостью электрофизических характеристик ячеек ReRAM. Также будет представлен обзор методов улучшения стабильности характеристик, произведен анализ их применимости к имеющимся образцам памяти. Будут предложены различные схемотехниченские и структурные изменения ячеек для повышения стабильности характеристик. Ключевые слова: энергонезависимая память; резистивная память; ReRAM; оксид гафния. This paper presents experimental data demonstrating the problem of the repeatability and reproducibility of electrophysical characteristics of ReRAM cells. An overview of methods for improving the stability of the characteristics will also be presented, and an analysis will be made of their applicability to the available memory samples. Some circuit and structural approaches to improving the stability of characteristics will be proposed.
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