Neuromorphic computing, an alternative for von Neumann architecture, requires synapse devices where the data can be stored and computed in the same place. The three-terminal synapse device is attractive for neuromorphic computing due to its high stability and controllability. However, high nonlinearity on weight update, low dynamic range, and incompatibility with conventional CMOS systems have been reported as obstacles for large-scale crossbar arrays. Here, we propose the CMOS compatible gate injection-based field-effect transistor employing thermionic emission to enhance the linear conductance update. The dependence of the linearity on the conduction mechanism is examined by inserting an interfacial layer in the gate stack. To demonstrate the conduction mechanism, the gate current measurement is conducted under varying temperatures. The device based on thermionic emission achieves superior synaptic characteristics, leading to high performance on the artificial neural network simulation as 93.17% on the MNIST dataset.
Conductive-bridging random access memory (CBRAM) has garnered attention as a building block of non–von Neumann architectures because of scalability and parallel processing on the crossbar array. To integrate CBRAM into the back-end-of-line (BEOL) process, amorphous switching materials have been investigated for practical usage. However, both the inherent randomness of filaments and disorders of amorphous material lead to poor reliability. In this study, a highly reliable nanoporous–defective bottom layer (NP–DBL) structure based on amorphous TiO
2
is demonstrated (Ag/a-TiO
2
/a-TiO
x
/p-Si). The stoichiometries of DBL and the pore size can be manipulated to achieve the analog conductance updates and multilevel conductance by 300 states with 1.3% variation, and 10 levels, respectively. Compared with nonporous TiO
2
CBRAM, endurance, retention, and uniformity can be improved by 10
6
pulses, 28 days at 85°C, and 6.7 times, respectively. These results suggest even amorphous-based systems, elaborately tuned structural variables, can help design more reliable CBRAMs.
Memristors are two-terminal memory devices that can change conductance state and store analog values. Thanks to their simple structure, suitability for high-density integration, and non-volatile characteristics, memristors have been intensively...
Memristors have attracted considerable attention as next-generation devices for logic and neuromorphic computing applications, owing to their high on/off current ratio, low power consumption, and high switching speed. Despite the various excellent characteristics of memristors, they suffer from unstable conductive filament-based switching when applied in real-world applications. To address this issue, the effects of Schottky barrier modulation on device performance, in terms of conduction and failure mechanisms of an Ag/WOx/p-Si memristor, were investigated in this study by varying the silicon (Si) doping concentration. Through the temperature analysis of I–V characteristics, different conduction mechanisms are observed according to the doping concentration and resistance state. Moreover, endurance failure with several doping concentrations is analyzed by using filament overgrowth phenomena. The results of this study are expected to help in the development of devices with characteristics suitable for application.
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