Thermal stability, microstructure and electrical property of molybdenum nitride film were studied for application of ULSI's DRAM capacitor electrode and copper diffusion barrier. Phase transformation from Mo to Y-Mo, 2 N was observed at 20% Nz/(Ar+N 2 ) flow ratio and Y-Mo 2 N and 8-MoN phases coexisted at 50% N 2 flow ratio. f-Mo 2 N film was found to crystallize at 4001C. Amorphous -t-Mo 2 N deposited at 3001C remained stable upon 7501C heat treatment. Breakdown strengths of f -Mo 2 N/Ta 2 O5/Si MOS capacitor before and after 8501C annealing were 2.4 MV/cm and 1.85 MV/cm at 1x10 6 A/cm 2 , respectively. After 8501C annealing, dielectric constant of Ta 2 O5 film decreased to 19.
The purpose of this study is to investigate the interfacial reactions between Mo foil and quartz in metal halide arc tubes. After welding to a tungsten cathode, the Mo foil was specially treated before Mo/SiO2 pinch seal operation. Mo foils in arc tubes show different performance in lamp depending on the type of the treatment. Mo/SiO2 interfacial reactions and amounts of Mo diffusion into the SiO2 were analyzed using TEM, SEM and EDS in order to understand the different properties of arc tubes.Arc tubes were treated with one of the following conditions : (A)untreated, (B)dry hydrogen fired, (C)process “B” plus humidity exposure. Cross-sectional TEM and SEM samples in the longitudinal direction of the arc tube through the center of Mo foil were prepared. Two Mo/SiO2 interfacial areas, one near the end of the W cathode and the other the longitudinal center of the foil were compared each other.
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