The authors propose a simple physical model of threshold switching in phase change memory cells based on the field induced nucleation of conductive cylindrical crystallites. The model is solved analytically and leads to a number of predictions including correlations between the threshold voltage Vth and material parameters, such as the nucleation barrier and radius, amorphous layer thickness, as well as Vth versus temperature and switching delay time. The authors have carried out verifying experiments, and good agreement is achieved.
Abstract. The weak point of traditional methods of innovation management is transformation of customer needs to the concept of new technique. Usually some creativity methods are used, but most of such methods cannot guaranty optimal result. TRIZ is a methodology to solve problems as close as possible to the Ideal Final Result by clarifying functions of the system under consideration even if contradictions rise during problem solving. The TRIZ methodology for inventive problems solving is used for the innovative resolution of various technical and physical contradictions in the artificial systems. TRIZ methodology developed by G.S. Altshuller, the author and TRIZniks in the former Soviet Union during last 50 years is reviewed. It is shown how TRIZ provides a possibility to find the best conceptual design of a new technique.
contact (BEC) and GST phase change layers (Fig 2). This Phase change memory (PCM) research has largely focused on approach self-aligns BEC and GST regions reliably to bulk properties to evaluate cell efficiency. Now both produce an efficient PCM cell. electrical and thermal interface resistances are characterized and shown to be critical for understanding power in a novel Damascene-GST cell. Interfaces reduce reset power 20% and reset current 40% and allow reset current to scale faster than it would without interfaces.
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