The surface structures of InSb films grown on (111)A, (111)B and (001)-oriented InSb substrates by molecular beam epitaxy were investigated in situ with a reflection high-energy electron diffraction technique, and the dependences of the surface reconstructions on the relative arrival rates of Sb and In and the surface temperature are reported. The change in surface structures on the (111)B and (001) faces occurs when the Sb/In ratio is about unity, and the ratio at transition does not depend on the substrate temperature. This behavior is interpreted as meaning that the sticking coefficient of Sb atoms (or molecules) is nearly unity for the Sb/In ratio \cong1.
InSb1-x
Bi
x
thin films were grown on InSb substrates by molecular beam epitaxy. The band-gaps of the films were confirmed to shift to longer wavelength with the increase of InBi mole fraction in the films by the measurement of p-n junction photovoltaic response.
On-facet quantum wire[1] is a new mesoscopic system which has several unique features. Cross sectional views of two types with different channel locations are shown in Fig. L. Basic properties of typical samples in these two types are listed in Table L. The charactefistics of the on-facet wire are high mobility despite large carrier density and almost
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